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AON6760 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AON6760 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 6 page  AON6760 30V N-Channel AlphaMOS General Description Product Summary VDS ID (at VGS=10V) 36A RDS(ON) (at VGS=10V) < 3.9m Ω RDS(ON) (at VGS=4.5V) < 4.9m Ω Application 100% UIS Tested 100% Rg Tested Orderable Part Number Package Type Form Minimum Order Quantity AON6760 DFN 5x6 Tape & Reel 3000 • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 30V Top View 1 2 3 4 8 7 6 5 G D S SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode PIN1 DFN 5X6 Top View Bottom View Symbol VDS VGS IDM IAS EAS VDS Spike VSPIKE TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJC Maximum Junction-to-Case °C/W °C/W Maximum Junction-to-Ambient A D 2.6 55 3.2 Power Dissipation B 15 TC=100°C 100ns PD 140 Pulsed Drain Current C IDSM TC=25°C 30 V ±12 Gate-Source Voltage Units Junction and Storage Temperature Range -55 to 150 mJ 18 Typ PDSM W TA=70°C 3.2 TA=25°C 5 36 39 Power Dissipation A 36 28 A TA=25°C W ID V A 60 Avalanche energy L=0.01mH C A TA=70°C TC=25°C TC=100°C Maximum Junction-to-Ambient A °C/W RθJA 20 45 25 °C Thermal Characteristics Parameter V Maximum Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted Max Drain-Source Voltage 22 Avalanche Current C Continuous Drain Current G Continuous Drain Current 28 Rev.1.0: November 2013 www.aosmd.com Page 1 of 6 |
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