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K6R1016C1C-I12 Datasheet(PDF) 3 Page - Samsung semiconductor |
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K6R1016C1C-I12 Datasheet(HTML) 3 Page - Samsung semiconductor |
3 / 11 page K6R1016C1C-C/C-L, K6R1016C1C-I/C-P CMOS SRAM Revision 4.0 - 3 - September 2001 ABSOLUTE MAXIMUM RATINGS* * Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Parameter Symbol Rating Unit Voltage on Any Pin Relative to VSS VIN, VOUT -0.5 to VCC+0.5 V Voltage on VCC Supply Relative to VSS VCC -0.5 to 7.0 V Power Dissipation Pd 1 W Storage Temperature TSTG -65 to 150 °C Operating Temperature Commercial TA 0 to 70 °C Industrial TA -40 to 85 °C RECOMMENDED DC OPERATING CONDITIONS*(TA= to 70 °C) * The above parameters are also guaranteed at industrial temperature range. ** VIL(Min) = -2.0V a.c(Pulse Width ≤ 8ns) for I ≤ 20mA. *** VIH(Max) = VCC + 2.0V a.c(Pulse Width ≤ 8ns) for I ≤ 20mA. Parameter Symbol Min Typ Max Unit Supply Voltage VCC 4.5 5.0 5.5 V Ground VSS 0 0 0 V Input High Voltage VIH 2.2 - VCC+0.5*** V Input Low Voltage VIL -0.5** - 0.8 V LB OE A0 A1 A2 N.C I/O1 UB A3 A4 CS I/O9 I/O2 I/O3 A5 A6 I/O11 I/O10 Vss I/O4 N.C A7 I/O12 Vcc Vcc I/O5 N.C N.C I/O13 Vss I/O7 I/O6 A14 A15 I/O14 I/O15 I/O8 N.C A12 A13 WE I/O16 N.C A8 A9 A10 A11 N.C 1 2 3 4 5 6 A B C D E F G H 48-CSP PIN CONFIGURATION(TOP VIEW) SOJ/ TSOP2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 A15 A14 A13 OE UB LB I/O16 I/O15 I/O14 I/O13 Vss Vcc I/O12 I/O11 I/O10 I/O9 N.C A12 A11 A10 A9 N.C A0 A1 A2 A3 A4 CS I/O1 I/O2 I/O3 I/O4 Vcc Vss I/O5 I/O6 I/O7 I/O8 WE A5 A6 A7 A8 N.C 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 |
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