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IDT71V2556S200BQ Datasheet(PDF) 6 Page - Integrated Device Technology

Part # IDT71V2556S200BQ
Description  128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

IDT71V2556S200BQ Datasheet(HTML) 6 Page - Integrated Device Technology

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IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings(1)
Pin Configuration — 256K x 18
100 TQFP Capacitance(1)
(TA = +25° C, f = 1.0MHz)
NOTES:
1. Pins 14, 16 and 66 do not have to be connected directly to VDD as long
as the input voltage is
≥ VIH.
2. Pins 83 and 84 are reserved for future 8M and 16M respectively.
3. Pin 64 does not have to be connected directly to VSS as long as the input
voltage is
≤ VIL; on the latest die revision this pin supports ZZ (sleep
mode).
Top View
TQFP
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VDD terminals only.
3. VDDQ terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supply has
reached its nominal operating value. Power sequencing is not necessary;
however, the voltage on any input or I/O pin cannot exceed VDDQ during power
supply ramp up.
7. TA is the "instant on" case temperature.
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
Symbol
Rating
Commercial &
Industrial Values
Unit
VTERM
(2)
Terminal Voltage with
Respect to GND
-0.5 to +4.6
V
VTERM
(3,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD
V
VTERM
(4,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD +0.5
V
VTERM(5,6)
Terminal Voltage with
Respect to GND
-0.5 to VDDQ +0.5
V
TA(7)
Commerical
Operating Temperature
-0 to +70
oC
Industrial
Operating Temperature
-40 to +85
oC
TBIAS
Temperature
Under Bias
-55 to +125
oC
TSTG
Storage
Temperature
-55 to +125
oC
PT
Power Dissipation
2.0
W
IOUT
DC Output Current
50
mA
4875 tbl 06
100 99 98 97 969594939291 90
87868584 83 82 81
89 88
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
NC
NC
VDDQ
VSS
NC
I/OP2
I/O15
I/O14
VSS
VDDQ
I/O13
I/O12
VSS
VDD
I/O11
I/O10
VDDQ
VSS
I/O9
I/O8
NC
NC
VSS
VDDQ
NC
NC
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
NC
VDDQ
VSS
NC
I/OP1
I/O7
I/O6
VSS
VDDQ
I/O5
I/O4
VSS
VDD
I/O3
I/O2
VDDQ
VSS
I/O1
I/O0
NC
NC
VSS
VDDQ
NC
NC
4875 drw 02a
VDD(1)
NC
NC
VDD(1)
NC
NC
VDD(1)
A10
VSS/ZZ(3)
,
Symbol
Parameter
(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
5
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
4875 tbl 07
119 BGA Capacitance(1)
(TA = +25° C, f = 1.0MHz)
Symbol
Parameter
(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
7
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
4875 tbl 07a
Symbol
Parameter
(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
TBD
pF
CI/O
I/O Capacitance
VOUT = 3dV
TBD
pF
4875 tb l 07b
165 fBGA Capacitance(1)
(TA = +25° C, f = 1.0MHz)


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