Electronic Components Datasheet Search |
|
KFG1G16Q2M-DED Datasheet(PDF) 4 Page - Samsung semiconductor |
|
KFG1G16Q2M-DED Datasheet(HTML) 4 Page - Samsung semiconductor |
4 / 93 page OneNAND512/OneNAND1GDDP FLASH MEMORY 4 Document Title OneNAND Revision History The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. Revision No. 0.4 1.0 1.1 1.2 Remark Preliminary Final Final Draft Date June 22, 2004 August 5, 2004 August 26, 2004 October 26, 2004 History 1. Corrected the errata 2. Added spare assignment information in detail 3. Added NAND array memory map 4. Added manufacturer ID for CS as 00ECh 5. Added stepping ID for CS in version ID register 6. Divided default status of interrupt status register by Warm,Hot reset and Cold reset 7. Revised Load operation flow chart 8. Revised Program operation flow chart 9. Deleted DBS setting step in Copy-back operation 10. Added OTP description 11. Revised OTP Load and Program flow chart 12. Added INT guidance 13. ECC description is revised 14. Added Data Protection Scheme during Power-down 15. Added DC/AC parameters 1. Deleted 2.7V product 2. Added 2.65V product 3. Added 3.3V product and industrial temperature in 3.3V product 4. Deleted Unlock/Lock BootRAM command 5. Added DBS setting step in Copy-back operation 6. Added 2.65V/3.3V DC parameters 7. Revised tCES from 9ns to 7ns 8. Deleted tOEH in asynchronous read operation 9. Revised NOP from 4 times per each main and spare in a page to 2 times per sector 10. Revised Write Protection status description 11. Added DDP selection and operation guidance 12. Added 1Gb DDP device ID 13. Added INT bit status in Cold Reset operation 14. Moved Interrupt register setting before inputting command in all flow charts 15. Revised Dual operation diagrams 16. Added and revised the asynchronous read operation timing diagram 17. Revised the asynchronous write operation timing diagram 18. Added the tREADY parameter in Hot Reset operation 1. Revised standby current for DDP 1. Corrected DDP device ID 2. Excluded Commercial Temperature range 3. Revised Cold Reset timing diagram 4. Added CE and RDY in Warm Reset diagram 5. Excluded Write while Load and Read while Program operation 6. Revised Extended Temperature minimum value from -25 to -30 7. Revised typical tOTP, tLOCK from 300us to 600us 8. Revised max tOTP, tLOCK from 600us to 1000us 9. Revised Icc4, Icc5 test condition 10. Added Endurance and Data Retention |
Similar Part No. - KFG1G16Q2M-DED |
|
Similar Description - KFG1G16Q2M-DED |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |