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FMM300-0055P Datasheet(PDF) 1 Page - IXYS Corporation |
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FMM300-0055P Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 2 page 1 - 2 © 2004 IXYS All rights reserved FMM 300-0055P IXYS reserves the right to change limits, test conditions and dimensions. I D25 = 300 A V DSS = 55 V R DSon typ. = 2.7 m Ω Ω Ω Ω Ω Trench Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM Features • trench MOSFET - very low on state resistance R DSon - fast switching • ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - UL registered, E 72873 Applications • automotive - AC drives - starter generator for 12/14 V etc. - choppers - replacing series resistors for DC drives, heating etc. - DC-DC converters - between 12V and 42V system etc. - electronic switches -replacing relays and fuses • power supplies - DC-DC converters - solar inverters - converters for fuel cells • battery supplied systems - choppers or inverters for drives in hand held tools - battery chargers MOSFET T1/T2 Symbol Conditions Maximum Ratings V DSS T VJ = 25°C to TVJmax 55 V V GS ±20 V I D25 T C = 25°C 300 A I D90 T C = 90°C 220 A I F25 (body diode) T C = 25°C 240 A I F90 (body diode) T C = 90°C 150 A Symbol Conditions Characteristic Values (T VJ = 25°C, unless otherwise specified) min. typ. max. R DSon V GS = 10 V; ID = 150 A 2.7 3.6 m Ω V GSth V DS = 20 V; ID = 2 mA 2 4 V I DSS V DS = 55 V; VGS = 0 V; TVJ = 25°C 2 µA T VJ = 125°C 0.2 mA I GSS V GS = ±20 V; VDS = 0 V 200 nA Q g 172 nC Q gs 36 nC Q gd 50 nC t d(on) 25 ns t r 50 ns t d(off) 70 ns t f 40 ns V F (body diode) I F = 150 A; VGS = 0 V 1.1 1.5 V t rr (body diode) I F = 40A; -di/dt = 200A/µs; VDS = 30V 100 ns R thJC 0.5 K/W R thJH with heat transfer paste 1 K/W V GS= 10 V; VDS = 44 V; ID = 50 A V GS= 10 V; VDS = 30 V I D = 50 A; RG = 4.7 Ω Preliminary data 1 5 T1 T2 1 5 3 4 2 |
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