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FMM300-0055P Datasheet(PDF) 1 Page - IXYS Corporation

Part # FMM300-0055P
Description  Trench Power MOSFET
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

FMM300-0055P Datasheet(HTML) 1 Page - IXYS Corporation

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© 2004 IXYS All rights reserved
FMM 300-0055P
IXYS reserves the right to change limits, test conditions and dimensions.
I
D25
= 300 A
V
DSS
= 55 V
R
DSon typ. = 2.7 m
Trench Power MOSFET
Phaseleg Topology
in ISOPLUS i4-PACTM
Features
trench MOSFET
- very low on state resistance R
DSon
-
fast switching
• ISOPLUS i4-PACTM package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
Applications
• automotive
- AC drives - starter generator
for 12/14 V etc.
- choppers - replacing series resistors
for DC drives, heating etc.
- DC-DC converters - between 12V
and 42V system etc.
- electronic switches -replacing relays
and fuses
• power supplies
- DC-DC converters
- solar inverters
- converters for fuel cells
• battery supplied systems
- choppers or inverters for drives in
hand held tools
- battery chargers
MOSFET T1/T2
Symbol
Conditions
Maximum Ratings
V
DSS
T
VJ = 25°C to TVJmax
55
V
V
GS
±20
V
I
D25
T
C = 25°C
300
A
I
D90
T
C = 90°C
220
A
I
F25
(body diode) T
C = 25°C
240
A
I
F90
(body diode) T
C = 90°C
150
A
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
R
DSon
V
GS = 10 V; ID = 150 A
2.7
3.6 m
V
GSth
V
DS = 20 V; ID = 2 mA
2
4
V
I
DSS
V
DS = 55 V; VGS = 0 V; TVJ =
25°C
2
µA
T
VJ = 125°C
0.2
mA
I
GSS
V
GS = ±20 V; VDS = 0 V
200
nA
Q
g
172
nC
Q
gs
36
nC
Q
gd
50
nC
t
d(on)
25
ns
t
r
50
ns
t
d(off)
70
ns
t
f
40
ns
V
F
(body diode) I
F = 150 A; VGS = 0 V
1.1
1.5
V
t
rr
(body diode) I
F = 40A; -di/dt = 200A/µs; VDS = 30V
100
ns
R
thJC
0.5 K/W
R
thJH
with heat transfer paste
1
K/W
V
GS= 10 V; VDS = 44 V; ID = 50 A
V
GS= 10 V; VDS = 30 V
I
D = 50 A; RG = 4.7
Preliminary data
1
5
T1
T2
1
5
3
4
2


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