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MMP60R190PE Datasheet(PDF) 2 Page - MagnaChip Semiconductor. |
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MMP60R190PE Datasheet(HTML) 2 Page - MagnaChip Semiconductor. |
2 / 10 page MMP60R190PE Datasheet Jan. 2018 Revision 1.0 MagnaChip Semiconductor Ltd. 3 Parameter Symbol Rating Unit Note Drain – Source voltage VDSS 600 V Gate – Source voltage VGSS ±30 V Continuous drain current ID 20 A TC=25 oC 12.7 A TC=100 oC Pulsed drain current (1) IDM 60 A Power dissipation PD 154 W Single - pulse avalanche energy EAS 420 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness (2) dv/dt 15 V/ns Storage temperature Tstg -55 ~150 oC Maximum operating junction temperature Tj 150 oC 1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS Parameter Symbol Value Unit Thermal resistance, junction-case max Rthjc 0.81 oC/W Thermal resistance, junction-ambient max Rthja 62.5 oC/W Thermal Characteristics Absolute Maximum Rating (Tc=25oC unless otherwise specified) |
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