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BFC13 Datasheet(PDF) 2 Page - Seme LAB |
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BFC13 Datasheet(HTML) 2 Page - Seme LAB |
2 / 2 page BFC13 Characteristic Test Conditions Min. Typ. Max. Unit Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Test Conditions Min. Typ. Max. Unit 48 192 1.8 210 415 830 4 8.3 16 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/94 IS ISM VSD trr Qrr VGS = 0V , IS = – ID [Cont.] IS = – ID [Cont.] dls / dt = 100A/µs Continuous Source Current (Body Diode) Pulsed Source Current1(Body Diode) Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge A V ns µC Characteristic Min. Typ. Max. Unit 3 5 2500 35 13 LD LS VIsolation CIsolation Torque Internal Drain Inductance (Measured From Drain Terminal to Centre of Die) Internal Source Inductance (Measured From Source Terminals to Source Bond Pads) RMS Voltage (50–60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Drain-to-Mounting Base Capacitance f = 1MHz Maximum Torque for Device Mounting Screws and Electrical Terminations nH V pF in–lbs Characteristic Min. Typ. Max. Unit 0.24 0.05 RθJC RθCS Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) °C/W DYNAMIC CHARACTERISTICS SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS PACKAGE CHARACTERISTICS THERMAL CHARACTERISTICS 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380 µS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge3 Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 0.6Ω pF nC ns 5570 6500 1170 1640 440 660 240 370 32 48 116 170 15 30 25 50 48 75 12 25 LAB SEME CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. |
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