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M36W0R6040T0 Datasheet(PDF) 8 Page - STMicroelectronics |
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M36W0R6040T0 Datasheet(HTML) 8 Page - STMicroelectronics |
8 / 18 page M36W0R6040T0, M36W0R6040B0 8/18 FUNCTIONAL DESCRIPTION The Flash Memory and PSRAM components have separate power supplies but share the same grounds. They are distinguished by three Chip En- able inputs: EF for the Flash memory and E1P and E2P for the PSRAM. Recommended operating conditions do not allow more than one device to be active at a time. The most common example is simultaneous read oper- ations on the Flash memory and the PSRAM which would result in a data bus contention. Therefore it is recommended to put the other de- vices in the high impedance state when reading the selected device. Figure 4. Functional Block Diagram AI08449 E1P E2P GP WP DQ0-DQ15 VDDF A0-A19 A20-A21 16 Mbit PSRAM GF UBP LBP WAITF 64 Mbit Flash Memory VDDP EF KF WF LF RPF WPF VPPF VDDQ VSS |
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