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2SC3415S Datasheet(PDF) 1 Page - Rohm |
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2SC3415S Datasheet(HTML) 1 Page - Rohm |
1 / 4 page 2SC4061K / 2SC3415S / 2SC4015 Transistors Rev.A 1/3 Chroma amplifier transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 Features 1) High breakdown voltage. (BVCEO =300V) 2) Low collector output capacitance. (Typ. 3pF at VCB =30V) 3) Ideal for chroma circuit. Absolute maximum ratings (Ta=25 °C) Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 300 300 5 100 150 −55 to +150 Unit V V V mA °C °C 0.3 W ∗ 0.2 1 2SC3415S 2SC4061K 2SC4015 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature ∗ Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. Storage temperature Packaging specifications and hFE Type 2SC3415S SPT NP −− TP 5000 2SC4015 ATV NP TV2 2500 Package hFE Code Marking Basic ordering unit (pieces) 2SC4061K SMT3 NP T146 AN ∗ 3000 ∗ Denotes hFE External dimensions (Unit : mm) 2SC3415S (3) Base (2) Collector (1) Emitter ROHM : SPT EIAJ : SC-72 2SC4015 (3) Base (2) Collector (1) Emitter ROHM : ATV 0.45 1.05 0.5 (1) 0.65Max. 2.54 (2) 2.54 (3) 6.8 2.5 Taping specifications 0.45 2.5 (1) (2) (3) 5 Taping specifications 0.45 0.5 42 2SC4061K ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector 0.3Min. 2.8 1.6 Each lead has same dimensions Electrical characteristics (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob 300 300 5 − − − 56 50 − − − − − − − − 100 3 − − − 0.5 0.5 2 180 − − V V V µA µA V − MHz pF IC=50 µA IC =100 µA IE =50 µA VCB =200V VEB =4V IC/IB =50mA/5mA VCE/IC =10V/10mA VCE =30V, IE= −10mA, f=30MHz VCB =30V, IE=0A, f=1MHz −− Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance |
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