2SJ601-Z datasheet(1/4 Pages) NEC

Part #	2SJ601-Z

Description	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

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©

2000

MOS FIELD EFFECT TRANSISTOR

2SJ601

SWITCHING

P-CHANNEL POWER MOS FET

INDUSTRIAL USE

PRELIMINARY DATA SHEET

Document No.

D14646EJ1V0DS00 (1st edition)

Date Published

November 2000 NS CP(K)

Printed in Japan

DESCRIPTION

The 2SJ601 is P-channel MOS Field Effect Transistor designed

for solenoid, motor and lamp driver.

FEATURES

• Low on-state resistance:

RDS(on)1 = 31 m

Ω MAX. (VGS = –10 V, ID = –18 A)

RDS(on)2 = 46 m

Ω MAX. (VGS = –4.0 V, ID = –18 A)

• Low Ciss: Ciss = 3300 pF TYP.

• Built-in gate protection diode

• TO-251/TO-252 package

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

–60

V

Gate to Source Voltage (VGS = 0 V)

VGSS

m 20

V

Drain Current (DC) (TC = 25°C)

ID(DC)

m 36

A

Drain Current (pulse)

Note1

ID(pulse)

m 120

A

Total Power Dissipation (TC = 25°C)

PT

65

W

Total Power Dissipation (TA = 25°C)

PT

1.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

–55 to +150

°C

Single Avalanche Current

Note2

IAS

–35

A

Single Avalanche Energy

Note2

EAS

123

mJ

Notes 1. PW

≤ 10

µs, Duty cycle ≤ 1%

2. Starting Tch = 25°C, RG = 25

Ω, VGS = –20 V ¡ 0 V

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SJ601

TO-251

2SJ601-Z

TO-252

(TO-251)

(TO-252)

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