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CLC5801 Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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CLC5801 Datasheet(HTML) 3 Page - National Semiconductor (TI) |
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3 / 14 page  Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. V CC ±7V I OUT Short Circuit protected to ground. Maximum reliability is obtained if I OUT does not exceed: 125mA Common-Mode Input Voltage ±V CC Maximum Junction Temperature +125˚C Storage Temperature Range −65˚C to +150˚C Lead Temperature (soldering 10 sec) +300˚C ESD (human body model) 1000V Operating Rating(Note 1) Thermal Resistance ( θ JC) SOIC 65˚C/W SOT23-5 115˚C/W Thermal Resistance ( θ JA) SOIC 145˚C/W SOT23-5 185˚C/W Temperature Range −40˚C to +85˚C Recommended Gain Range ±10 to ±1000V/V Electrical Characteristics (T A= 25˚C, VCC = ±5V, Rg = 26.1Ω,Rf= 499Ω,RL= 100Ω; unless specified). Symbol Parameter Conditions Typ Min/Max Ratings (Note 2) Units +25˚C −40˚C +25˚C +85˚C Frequency Domain Response GBW Gain Bandwidth Product V O < 0.4VPP 1.8 1.3 GHz SSBW −3dB Bandwidth (A V = +10) V O < 0.4VPP 420 MHz −3dB Bandwidth (A V = +20) V O < 0.4VPP 90 70 LSBW −3dB Bandwidth V O < 5.0VPP 35 30 GFP Gain Flatness Peaking DC to 30MHz, V O < 0.4VPP 0.4 0.5 dB GFR Gain Flatness Rolloff DC to 30MHz, V O < 0.4VPP 0.2 0.5 dB LPD Linear Phase Deviation DC to 30MHz, V O < 0.4VPP 0.8 1.5 Deg Time Domain Response TRS Rise and Fall Time 0.4V step 4.0 4.7 ns TSS Settling Time to 0.2% 2V step 18 30 ns OS Overshoot 0.4V step 5 10 % SR Slew Rate 2V step 300 250 V/µs Distortion And Noise Response HD2 2nd Harmonic Distortion 1V PP,10MHz −53 −48 dBc HD3 3rd Harmonic Distortion 1V PP,10MHz −78 −65 dBc IMD 3rd Order Intermod. Intercept 10MHz 34 dBm VN Equivalent Input Noise Voltage 1MHz to 100MHz 2.0 2.7 nV/ ICN Equivalent Input Noise Current 1MHz to 100MHz 1.8 2.5 pA/ Static, DC Performance AOL Open-Loop Gain DC 96 77 86 86 dB VIO Input Offset Voltage (Note 3) ±100 ±1000 ±800 ±1000 µV DVIO Offset Voltage Average Drift ±2 8 – 4 µV/˚C IB Input Bias Current (Note 3) 12 40 20 20 µA DIB Bias Current Average Drift −100 −250 – −120 µA/˚C IIO Input Offset Current ±0.2 3.4 2.0 2.0 µA DIIO Offset Current Average Drift ±3 ±50 – ±25 nA/˚C PSRR Power Supply Rejection Ratio DC 90 80 85 84 dB CMRR Common Mode Rejection Ratio DC 95 84 88 86 dB ICC Supply Current (Note 3) R L = ∞ 16 18 17 17 mA www.national.com 3 |
Similar Part No. - CLC5801 |
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Similar Description - CLC5801 |
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