IKB15N60T datasheet(8/13 Pages) INFINEON

Part #	IKB15N60T

Description	IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IKB15N60T

TrenchStop Series

q

Power Semiconductors

8

Rev. 2.1 Dec-04

0nC

20nC

40nC

60nC

80nC

100nC

0V

5V

10V

15V

480V

120V

0V

10V

20V

30V

40V

50V

10pF

100pF

1nF

C

rss

C

oss

C

iss

QGE, GATE CHARGE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

(IC=15 A)

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

12V

14V

16V

18V

0A

50A

100A

150A

200A

10V

11V

12V

13V

14V

0µs

2µs

4µs

6µs

8µs

10µs

12µs

VGE, GATE-EMITTETR VOLTAGE

VGE, GATE-EMITETR VOLTAGE

Figure 19. Typical short circuit collector

current as a function of gate-

emitter voltage

(VCE

≤ 400V, Tj ≤ 150°C)

Figure 20. Short circuit withstand time as a

function of gate-emitter voltage

(VCE=600V, start at TJ=25°C,

TJmax<150°C)

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