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TPS65552A Datasheet(PDF) 3 Page - Texas Instruments |
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TPS65552A Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 14 page  www.ti.com ELECTRICAL CHARACTERISTICS SWITCHING CHARACTERISTICS TPS65552A SLVS567 – JULY 2005 T A = 25°C, VBAT = 4.2 V, VCC = 5 V, V(SW) = 4.2 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT R(ONL) ON resistance of XFULL I(XFULL) = -1 mA 1.5 3 k Ω V(PKH)(1) Upper threshold voltage of I_PEAK 2.4 V V(PKL)(1) Lower threshold voltage of I_PEAK 0.6 V CHG = H, V(SW) = 0 V ICC1 Supply current from VBAT 27 µA (free run by tMAX) CHG = H, V(SW) = 0 V ICC2 Supply current from VCC 2.5 5 mA (free run by tMAX) ICC3 Supply current from VCC and CHG = L 1 µA VBAT Ilkg1 Leakage current of SW terminal 2 µA Ilkg2 Leakage current of XFULL ter- V(XFULL) = 5 V 1 µA minal SW ON resistance between R(ONSW) I(SW) = 1 A 0.3 1 Ω SW and PGND R(IGBT1) G_IGBT pullup resistance V(G_IGBT) = 0 V 5 10 15 Ω R(IGBT2) G_IGBT pulldown resistance V(G_IGBT) = 5 V 25 51 75 Ω I(PEAK1) Upper peak of I(SW) V(I_IPEAK) = 3 V 1.58 1.68 1.78 A I(PEAK2) Lower peak of I(SW) V(I_IPEAK) = 0 V 0.77 0.87 0.97 A Charge completion detect voltage V(FULL) TPS65552A 28.7 29 29.3 V at V(SW) V(ZERO) Zero current detection at V(SW) 1 20 60 mV T(SD)(1) Thermal shutdown temperature 150 160 170 °C Over VDS detection at V(SW) 0.95 1.2 1.45 V tMAX MAX ON time 50 80 120 µs Pulldown resistance of CHG, R(INPD) VCHG = V(F_ON) = 4.2 V 100 k Ω F_ON (1) Specified by design. T A = 25°C, VBAT = 4.2 V, VCC = 5 V, V(SW) = 4.2 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT F_ON ↑↓ - G_IGBT↑↓ 50 ns SW ON after V(SW) dips from V(ZERO) 45 ns SW OFF after I(SW) exceeds I(PEAK) 270 ns tPD(1) Propagation delay XFULL ↓ after V (SW) exceeds V(FULL) 300 ns SW ON after CHG ↑ 20 ns SW OFF after CHG ↓ 20 ns (1) Specified by design. 3 |
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