BLF861A datasheet(4/16 Pages) PHILIPS

Part #	BLF861A

Description	UHF power LDMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 16 page

2001 Feb 09

4

Philips Semiconductors

Product speciﬁcation

UHF power LDMOS transistor

BLF861A

APPLICATION INFORMATION

RF performance in a common source 860 MHz test circuit. Th =25 °C; Rth mb-h = 0.15 K/W; unless otherwise speciﬁed.

Note

1. Sync compression: input sync

≥ 33%; output sync 27% measured in an 860 MHz test circuit.

Ruggedness in class-AB operation

The BLF861A is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the

following conditions: VDS = 32 V; f = 860 MHz at rated load power.

The BLF861A is an improved version of the BLF861 on ruggedness and is capable to withstand abrupt source or load

mismatch errors under the nominal power condition.

MODE OF

OPERATION

f

(MHz)

VDS

(V)

IDQ

(A)

PL

(W)

Gp

(dB)

η

D

(%)

dIm

(dBc)

∆G

p

(dB)

CW; class-AB

860

32

1

150

>13.5

typ. 14.5

>50

−≤1

2-tone; class-AB

f1 = 860

f1 = 860.1

32

1

150 (PEP)

>14

>40

≤−25

−

PAL BG (TV); class-AB

860

(ch 69)

32

1

> 150

typ. 170

(peak sync)

>14

>40

−

note 1

handbook, halfpage

400

900

12

0

4

8

500

xi

ri

zi

(

Ω)

f (MHz)

600

700

800

MCD871

Fig.3

Input impedance as a function of frequency

(series components); typical push-pull

values.

CW, class-AB operation; VDS = 32 V; IDQ =1A;

PL = 170 W (total device); Th =25 °C.

handbook, halfpage

400

900

10

0

−5

5

500

600

700

800

f (MHz)

ZL

(

Ω)

MCD872

XL

RL

Fig.4

Load impedance as a function of frequency

(series components); typical push-pull

values.

CW, class-AB operation; VDS = 32 V; IDQ =1A;

PL = 170 W (total device); Th =25 °C.

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