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K9F1G08R0A Datasheet(PDF) 2 Page - Samsung semiconductor |
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K9F1G08R0A Datasheet(HTML) 2 Page - Samsung semiconductor |
2 / 37 page 2 K9F1G08U0A K9F1G08R0A K9K2G08U1A FLASH MEMORY GENERAL DESCRIPTION FEATURES • Voltage Supply -1.8V device(K9F1G08R0A): 1.65V~1.95V -3.3V device(K9F1G08U0A): 2.7 V ~3.6 V • Organization - Memory Cell Array : (128M + 4,096K)bit x 8bit - Data Register : (2K + 64)bit x8bit - Cache Register : (2K + 64)bit x8bit • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte • Page Read Operation - Page Size : 2K-Byte - Random Read : 25 µs(Max.) - Serial Access : 30ns(Min.) - 3.3v device 50ns(Min.) -1.8v device 128M x 8 Bit /256M x 8 Bit NAND Flash Memory • Fast Write Cycle Time - Program time : 200 µs(Typ.) - Block Erase Time : 2ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years • Command Register Operation • Cache Program Operation for High Performance Program • Intelligent Copy-Back Operation • Unique ID for Copyright Protection • Package : - K9F1G08U0A-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9F1G08U0A-VIB0 48 - Pin WSOP I (12X17X0.7mm) - K9F1G08U0A-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package - K9F1G08U0A-FIB0 48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package * K9F1G08U0A-V,F(WSOPI ) is the same device as K9F1G08U0A-Y,P(TSOP1) except package type. - K9K2G08U1A-ICB0/IIB0 52-ULGA (12X17X0.65mm) Offered in 128Mx8bit the K9F1G08X0A is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200 µs on the 2112-byte page and an erase operation can be performed in typical 2ms on a 128K-byte block. Data in the data page can be read out at 30ns(50ns with 1.8V device) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1G08X0A ′s extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08X0A is an optimum solu- tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. PRODUCT LIST Part Number Vcc Range Organization PKG Type K9F1G08R0A 1.65 ~ 1.95V X8 Only available in MCP K9F1G08U0A-Y,P 2.7 ~ 3.6V TSOP1 K9F1G08U0A-V,F WSOP1 K9K2G08U1A-I 52-ULGA |
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