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K9F1G08R0A Datasheet(PDF) 2 Page - Samsung semiconductor

Part # K9F1G08R0A
Description  128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K9F1G08R0A Datasheet(HTML) 2 Page - Samsung semiconductor

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K9F1G08U0A
K9F1G08R0A
K9K2G08U1A
FLASH MEMORY
GENERAL DESCRIPTION
FEATURES
• Voltage Supply
-1.8V device(K9F1G08R0A): 1.65V~1.95V
-3.3V device(K9F1G08U0A): 2.7 V ~3.6 V
• Organization
- Memory Cell Array : (128M + 4,096K)bit x 8bit
- Data Register : (2K + 64)bit x8bit
- Cache Register : (2K + 64)bit x8bit
• Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
• Page Read Operation
- Page Size : 2K-Byte
- Random Read : 25
µs(Max.)
- Serial Access : 30ns(Min.) - 3.3v device
50ns(Min.) -1.8v device
128M x 8 Bit /256M x 8 Bit NAND Flash Memory
• Fast Write Cycle Time
- Program time : 200
µs(Typ.)
- Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
• Command Register Operation
• Cache Program Operation for High Performance Program
• Intelligent Copy-Back Operation
• Unique ID for Copyright Protection
• Package :
- K9F1G08U0A-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1G08U0A-VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F1G08U0A-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F1G08U0A-FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1G08U0A-V,F(WSOPI ) is the same device as
K9F1G08U0A-Y,P(TSOP1) except package type.
- K9K2G08U1A-ICB0/IIB0
52-ULGA (12X17X0.65mm)
Offered in 128Mx8bit the K9F1G08X0A is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-effective solution
for the solid state mass storage market. A program operation can be performed in typical 200
µs on the 2112-byte page and an erase
operation can be performed in typical 2ms on a 128K-byte block. Data in the data page can be read out at 30ns(50ns with 1.8V
device) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip
write controller automates all program and erase functions including pulse repetition, where required, and internal verification and
margining of data. Even the write-intensive systems can take advantage of the K9F1G08X0A
′s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08X0A is an optimum solu-
tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9F1G08R0A
1.65 ~ 1.95V
X8
Only available in MCP
K9F1G08U0A-Y,P
2.7 ~ 3.6V
TSOP1
K9F1G08U0A-V,F
WSOP1
K9K2G08U1A-I
52-ULGA


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