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BFG310W Datasheet(PDF) 7 Page - NXP Semiconductors |
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BFG310W Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 12 page 9397 750 14245 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 7 of 12 Philips Semiconductors BFG310W/XR NPN 14 GHz wideband transistor 8. Application information Table 8: SPICE parameters of the BFG310W DIE Sequence Parameter Value Unit 1 IS 16.17 aA 2 BF 210 - 3NF 1 - 4 VAF 50 V 5 IKF 59.83 mA 6 ISE 1.726 fA 7 NE 2.114 - 8BR 6 - 9NR 1 - 10 VAR 2.3 V 11 IKR 10 A 12 ISC 0 aA 13 NC 1.5 - 14 RB 3.6 Ω 15 RE 2.1 Ω 16 RC 1.6 Ω 17 CJE 115.6 fF 18 VJE 866.3 mV 19 MJE 0.285 - 20 CJC 68.18 fF 21 VJC 601 mV 22 MJC 0.123 - 23 XCJC 1 - 24 FC 0.7 - 25 TF 8.3 ps 26 XTF 10 - 27 VTF 1000 V 28 ITF 150 mA 29 PTF 0 deg 30 TR 0 ns 31 KF 0 - 32 AF 1 - 33 TNOM 25 °C 34 EG 1.014 eV 35 XTB 0 - 36 XTI 8 - 37 Q1.AREA 1 - |
Similar Part No. - BFG310W |
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Similar Description - BFG310W |
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