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K6R4004C1C-E10 Datasheet(PDF) 2 Page - Samsung semiconductor

Part # K6R4004C1C-E10
Description  1Mx4 Bit High Speed Static RAM(5V Operating).
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6R4004C1C-E10 Datasheet(HTML) 2 Page - Samsung semiconductor

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K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E
CMOS SRAM
PRELIMINARY
Rev 3.0
- 2 -
March 2000
1M x 4 Bit (with OE)High-Speed CMOS Static RAM
GENERAL DESCRIPTION
FEATURES
• Fast Access Time 10,12,15,20ns(Max.)
• Low Power Dissipation
Standby (TTL)
: 60mA(Max.)
(CMOS) : 10mA(Max.)
Operating
K6R4004C1C-10 : 160mA(Max.)
K6R4004C1C-12 : 150mA(Max.)
K6R4004C1C-15 : 140mA(Max.)
K6R4004C1C-20 : 130mA(Max.)
• Single 5.0V
±10% Power Supply
• TTL Compatible Inputs and Outputs
• I/O Compatible with 3.3V Device
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration
K6R4004C1C-J : 32-SOJ-400
PIN FUNCTION
Pin Name
Pin Function
A0 - A19
Address Inputs
WE
Write Enable
CS
Chip Select
OE
Output Enable
I/O1 ~ I/O4
Data Inputs/Outputs
VCC
Power(+5.0V)
VSS
Ground
N.C
No Connection
The K6R4004C1C is a 4,194,304-bit high-speed Static Random
Access Memory organized as 1,048,576 words by 4 bits. The
K6R4004C1C uses 4 common input and output lines and has
an output enable pin which operates faster than address
access time at read cycle. The device is fabricated using SAM-
SUNG
′s advanced CMOS process and designed for high-
speed circuit technology. It is particularly well suited for use in
high-density
high-speed
system
applications.
The
K6R4004C1C is packaged in a 400 mil 32-pin plastic SOJ.
PIN CONFIGURATION(Top View)
SOJ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A19
A18
A17
A16
A15
OE
I/O4
Vss
Vcc
I/O3
A14
A13
A12
A11
A10
N.C
A0
A1
A2
A3
A4
CS
I/O1
Vcc
Vss
I/O2
WE
A5
A6
A7
A8
A9
K6R4004C1C-C10/C12/C15/C20
Commercial Temp.
K6R4004C1C-E10/E12/E15/E20
Extended Temp.
K6R4004C1C-I10/I12/I15/I20
Industrial Temp.
ORDERING INFORMATION
Clk Gen.
I/O1~I/O4
CS
WE
OE
FUNCTIONAL BLOCK DIAGRAM
Data
Cont.
Column Select
CLK
Gen.
Pre-Charge Circuit
Memory Array
1024 Rows
1024 x 4 Columns
I/O Circuit
A10
A12
A14
A16
A18
A11
A13
A15
A17
A19
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9


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