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K9F1216D0A-Y Datasheet(PDF) 1 Page - Samsung semiconductor

Part # K9F1216D0A-Y
Description  64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K9F1216D0A-Y Datasheet(HTML) 1 Page - Samsung semiconductor

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FLASH MEMORY
1
K9F1208D0A
K9F1208U0A
K9F1216D0A
K9F1216U0A
Document Title
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Remark
Preliminary
History
Initial issue.
TBGA(K9F12XXX0A-DCB0/DIB0) size information is changed.
(before) 9 x 11 /0.8mm pitch , Width 1.0 mm
(after )
To Be Decided.
TBGA(K9F12XXX0A-DCB0/DIB0) size information is changed.
(before) 9 x 11 /0.8mm pitch , Width 1.0 mm, to
(after) 8.5 x 15 /0.8mm pitch, Width 1.0mm
Pin numbering includes TBGA Dummy ball . (Page5)
Pin numbering excludes TBGA Dummy ball . (Page5)
Pin assignment of TBGA dummy ball is changed.
(before) DNU --> (after) N.C
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 43)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 44)
The min. Vcc value 1.8V devices is changed.
K9F1208Q0A : Vcc 1.65V~1.95V --> 1.70V~1.95V
Pb-free Package is added.
K9F1208U0A-FCB0,FIB0
K9F1208Q0A-HCB0,HIB0
K9F1216U0A-HCB0,HIB0
K9F1216U0A-PCB0,PIB0
K9F1216Q0A-HCB0,HIB0
K9F1208U0A-HCB0,HIB0
K9F1208U0A-PCB0,PIB0
Errata is added.(Front Page)-K9F1208Q0A
tWC tWH tWP tRC tREH tRP tREA tCEA
Specification
45
15
25
50
15
25
30
45
Relaxed value
60
20
40
60
20
40
40
55
New definition of the number of invalid blocks is added.
(Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb
memory space.)
1. 2.65V device is added.
2. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
Draft Date
Apr. 25th 2002
May. 9th 2002
July, 10th 2002
Aug, 10th 2002
Oct, 21th 2002
Nov, 21th 2002
Mar. 5th 2003
Mar. 13rd 2003
Mar. 17th 2003
Apr. 4th 2003
Jul. 4th 2003
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm


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