RK4410

Transistors

Thermal resistance (Ta=25

°C)

Rth(ch-A)

62.5

˚C / W

Symbol

Limits

Unit

Parameter

Channel to Ambient

Electrical characteristics (Ta=25

°C)

f=1MHz

Ω

Ω

µA

pF

m

Ω

S

V

µA

V

pF

pF

ns

ns

ns

ns

nC

nC

nC

−

30

−

1.0

−

−

−

10

−

−

−

−

−

−

−

−

−

−

−

−

−

−

9

13

15

−

1750

950

450

20

55

100

70

44.8

5.9

12.2

−

10

2.5

12

18

20

−

−

−

−

−

−

−

−

89.6

−

−

±10

Parameter

Gate-Source Leakage

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Threshold Voltage

Forward Transfer Admittance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Test Conditions

Unit

Min.

Typ.

Max.

Symbol

Static Drain-Source On-State

Resistance

Body diode characteristics (Source-Drain Characteristics) (Ta=25

°C)

Parameter

Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Test Conditions

V

Unit

ns

nC

−

−

−

Min.

−

240

310

Typ.

1.5

−

−

Max.

di/dt=100A/

µs

Symbol