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SI4420DY Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI4420DY Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 1 page Specification Comparison Vishay Siliconix Document Number 74060 www.vishay.com 06-May-05 Si4420BDY vs. Si4420DY Description: N-Channel, 30-V (D-S) MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si4420BDY-T1-E3 Replaces Si4420DY-T1-E3 Si4420BDY-T1-E3 Replaces Si4420DY-T1 Summary of Performance: The Si4420BDY is the replacement to the original Si4420DY; both parts perform identically, including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Si4420BDY Si4420DY Unit Drain-Source Voltage VDS 30 30 Gate-Source Voltage VGS +20 +20 V TA = 25°C 13.5 13.5 Continuous Drain Current TA = 70°C ID 10.8 10.8 Pulsed Drain Current IDM 50 50 Continuous Source Current (MOSFET Diode Conduction) IS 2.3 2.7 A TA = 25°C 2.5 3.0 Power Dissipation TA = 70°C PD 1.6 1.9 W Operating Junction & Storage Temperature Range Tj & Tstg -55 to 150 -55 to 150 °C Maximum Junction-to-Ambient RthJA 50 42 °C/W SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED) Si4420BDY Si4420DY Parameter Symbol Min Typ Max Min Typ Max Unit Static Gate-Threshold Voltage VGS(th) 1.0 3.0 1.0 2.0 3.0 V Gate-Body Leakage IGSS +100 +100 nA Zero Gate Voltage Drain Current IDSS 1 1 µA On-State Drain Current VGS = 10 V ID(on) 30 30 A VGS= 10 V 0.007 0.0085 0.0075 0.009 Drain-Source On-Resistance VGS = 4.5 V rDS(on) 0.009 0.011 0.010 0.013 Ω Forward Transconductance gfs 50 50 S Diode Forward Voltage VSD 0.75 1.1 NS 1.1 V Dynamic Total Charge Qg 16 25 29 45 Total Gate Charge Qgt 31 50 58 90 Gate-Source Charge Qgs 6.6 12 Gate-Drain Charge Qgd 4.0 9.5 nC Gate Resistance Rg 0.5 1.0 1.5 0.5 2.1 4.6 Ω Switching td(on) 15 25 22 35 Turn-On Time* tr 11 18 13 20 td(off) 40 60 82 125 Turn-Off Time* tf 12 20 30 45 Source-Drain Reverse Recovery Time trr 30 50 50 75 ns NS denotes parameter not specified |
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