Si5504DC

Vishay Siliconix

Document Number: 71056

S-21251—Rev. B, 05-Aug-02

www.vishay.com

2-1

Complementary 30-V (D-S) MOSFET

PRODUCT SUMMARY

"3.9

N-Channel

30

"3.0

"2.8

P-Channel

-30

"2.1

Bottom View

N-Channel MOSFET

P-Channel MOSFET

1206-8 ChipFET

1

Marking Code

EA

XX

Lot Traceability

and Date Code

Part # Code

Ordering Information: Si5504DC-T1

N-Channel

P-Channel

Parameter

Symbol

5 secs

Steady State

5 secs

Steady State

Unit

Drain-Source Voltage

30

-30

Gate-Source Voltage

"20

V

_

"3.9

"2.9

"2.8

"2.1

"2.8

"2.1

"2.0

"1.5

Pulsed Drain Current

"10

A

1.8

0.9

-1.8

-0.9

2.1

1.1

2.1

1.1

1.1

0.6

1.1

0.6

W

Operating Junction and Storage Temperature Range

-55 to 150

_

260

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

v 5 sec

50

60

Steady State

90

110

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

30

40

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

See Reliability Manual for profile. The ChipFET/PowerPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the

singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder

interconnection.

c.

Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.