IDT71V2579SA75BQ datasheet(4/22 Pages) IDT

Part #	IDT71V2579SA75BQ

Description	128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect

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Manufacturer	IDT [Integrated Device Technology]

Direct Link	http://www.idt.com

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IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with

2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

100 Pin TQFP Capacitance

(TA = +25°C, f = 1.0MHz)

Recommended DC Operating

Conditions

Recommended Operating

Temperature and Supply Voltage

Absolute Maximum Ratings(1)

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated

in the operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect reliability.

2. VDD terminals only.

3. VDDQ terminals only.

4. Input terminals only.

5. I/O terminals only.

6. This is a steady-state DC parameter that applies after the power supplies have

ramped up. Power supply sequencing is not necessary; however, the voltage

on any input or I/O pin cannot exceed VDDQ during power supply ramp up.

7. TA is the “instant on” case temperature.

NOTES:

1. VIH (max) = VDDQ + 1.0V for pulse width less than tCYC/2, once per cycle.

2. VIL (min) = -1.0V for pulse width less than tCYC/2, once per cycle.

NOTE:

1. This parameter is guaranteed by device characterization, but not production tested.

Symbol

Rating

Commerical &

Industrial Values

Unit

VTERM(2)

Terminal Voltage with

Respect to GND

-0.5 to +4.6

V

VTERM(3,6)

Terminal Voltage with

Respect to GND

-0.5 to VDD

V

VTERM(4,6)

Terminal Voltage with

Respect to GND

-0.5 to VDD +0.5

V

VTERM(5,6)

Terminal Voltage with

Respect to GND

-0.5 to VDDQ +0.5

V

TA(7)

Commercial

Operating Temperature

-0 to +70

oC

Industrial

Operating Temperature

-40 to +85

oC

TBIAS

Temperature

Under Bias

-55 to +125

oC

TSTG

Storage

Temperature

-55 to +125

oC

PT

Power Dissipation

2.0

W

IOUT

DC Output Current

50

mA

4877 tbl 03

Grade

Temperature(1)

VSS

VDD

VDDQ

Commercial

0°C to +70°C

0V

3.3V±5%

2.5V±5%

Industrial

-40°C to +85°C

0V

3.3V±5%

2.5V±5%

4877 tbl 04

Symbol

Parameter

Min.

Typ.

Max.

Unit

VDD

Core Supply Voltage

3.135

3.3

3.465

V

VDDQ

I/O Supply Voltage

2.375

2.5

2.625

V

VSS

Supply Voltage

0

V

VIH

Input High Voltage - Inputs

1.7

____

VDD + 0.3

V

VIH

Input High Voltage - I/O

1.7

____

VDDQ + 0.3

(1)

V

VIL

Input Low Voltage

-0.3

(2)

____

0.7

V

4877 tbl 05

Symbol

Parameter(1)

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 3dV

5

pF

CI/O

I/O Capacitance

VOUT = 3dV

7

pF

4877 tbl 07

119 BGA Capacitance

(TA = +25°C, f = 1.0MHz)

Symbol

Parameter(1)

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 3dV

7

pF

CI/O

I/O Capacitance

VOUT = 3dV

7

pF

4877 tbl 07a

NOTES:

1. TA is the “instant on” case temperature.

165 fBGA Capacitance

(TA = +25°C, f = 1.0MHz)

Symbol

Parameter(1)

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 3dV

7

pF

CI/O

I/O Capacitance

VOUT = 3dV

7

pF

4877 tbl 07b

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