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TLP3115 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TLP3115 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TLP3115 2003-7-7 2 MAXIMUM RATINGS (Ta ==== 25°C) CHARACTERISTIC SYMBOL RATING UNIT Forward Current IF 50 mA Forward Current Derating (Ta >= 25°C) DIF/°C -0.5 mA/°C Reverse Voltage VR 5 V Junction Temperature Tj 125 °C Off-State Output Terminal Voltage VOFF 40 V On-State Current ION 300 mA On-State Current Derating (Ta >= 25°C) DION/°C -3.0 mA/°C Junction Temperature Tj 125 °C Storage Temperature Range Tstg -40~125 °C Operating Temperature Range Topr -20~85 °C Lead Soldering Temperature (10 s) Tsol 260 °C Isolation Voltage (AC, 1 minute, R.H. <= 60%) (NOTE1) BVS 1500 Vrms (NOTE1) : Device considered a two-terminal device : Pins 1 and, 2 shorted together, and pins 3 and 4 shorted together. CAUTION This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed. RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT Supply Voltage VDD ¾ ¾ 32 V Forward Current IF 10 ¾ 30 mA On-State Current ION ¾ ¾ 300 mA Operating Temperature Topr 25 ¾ 60 °C INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta ==== 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse Current IR VR = 5 V ¾ ¾ 10 mA Capacitance CT V = 0, f = 1 MHz ¾ 15 ¾ pF Off-State Current IOFF VOFF = 30 V, Ta = 50°C ¾ ¾ 1000 pA Capacitance COFF V = 0, f = 100 MHz, t < 1 s ¾ 10 14 pF |
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