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AS6WA25616-TI Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part # AS6WA25616-TI
Description  3.0V to 3.6V 256K X 6 IntelliwattTM low-power CMOS SRAM with one chip enable
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Manufacturer  ETC1 [List of Unclassifed Manufacturers]
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AS6WA25616-TI Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers

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September 2001
Copyright ©Alliance Semiconductor. All rights reserved.
Š
AS6WA25616
3.0V to 3.6V 256K×16 Intelliwatt™ low-power CMOS SRAM with one chip enable
7/9/02; v.1.3
Alliance Semiconductor
P. 1 of 9
Features
• AS6WA25616
• Intelliwatt™ active power circuitry
• Industrial and commercial temperature ranges available
• Organization: 262,144 words × 16 bits
• 3.0V to 3.6V at 55 ns
• Low power consumption: ACTIVE
- 144 mW at 3.6V and 55 ns
• Low power consumption: STANDBY
- 72 µW max at 3.6V
• 1.5V data retention
• Equal access and cycle times
• Easy memory expansion with CS, OE inputs
• Smallest footprint packages
- 48-ball FBGA
- 400-mil 44-pin TSOP 2
• ESD protection
≥ 2000 volts
• Latch-up current
≥ 200 mA
Logic block diagram
256K × 16
Array
(4,194,304)
OE
CS
WE
Column decoder
A0
A1
A2
A3
A4
A6
A7
A8
VCC
VSS
A12
A13
Control circuit
I/O1–I/O8
I/O9–I/O16
UB
LB
I/O
buffer
Pin arrangement (top view)
48-CSP Ball-Grid-Array Package
123456
ALB
OE
A0
A1
A2
NC
BI/O9
UB
A3
A4
CS
I/O1
C
I/O10 I/O11
A5
A6
I/O2
I/O3
DVSS
I/O12
A17
A7
I/O4
VCC
EVCC I/O13 NC
A16
I/O5
VSS
F
I/O15 I/O14
A14
A15
I/O6
I/O7
G
I/O16
NC
A12
A13
WE
I/O8
H
NC
A8
A9
A10
A11
NC
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
I/O14
I/O13
VSS
VCC
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
A12
A0
CS
I/O1
I/O2
I/O3
I/O4
VCC
VSS
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
44-pin 400-mil TSOP 2
21
22
A14
A13
UB
LB
I/O16
I/O15
2
A3
3
A2
4
A1
1
A4
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
43
42
41
44
A6
A7
OE
A5
Selection guide
Product
VCC Range
Speed
(ns)
Power Dissipation
Min
(V)
Typ2
(V)
Max
(V)
Operating (ICC)Standby (ISB1)
Max (mA)
Max (
µA)
AS6WA25616
3.0
3.3
3.6
55
2
20


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