BUK9615-100A datasheet(2/9 Pages) PHILIPS

Part #	BUK9615-100A

Description	N-Channel Enhancement mode logic Level field-Effect power Transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

TrenchMOS

 transistor

BUK9515-100A

Logic level FET

BUK9615-100A

STATIC CHARACTERISTICS

T

j= 25˚C

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

(BR)DSS

Drain-source breakdown

V

GS = 0 V; ID = 0.25 mA;

100

-

V

voltage

T

j = -55˚C

89

-

V

GS(TO)

Gate threshold voltage

V

DS = VGS; ID = 1 mA

1

1.5

2.0

V

T

j = 175˚C

0.5

-

V

T

j = -55˚C

-

2.3

V

I

DSS

Zero gate voltage drain current

V

DS = 100 V; VGS = 0 V;

-

0.05

10

µA

T

j = 175˚C

-

500

µA

I

GSS

Gate source leakage current

V

GS = ±10 V; VDS = 0 V

-

2

100

nA

R

DS(ON)

Drain-source on-state

V

GS = 5 V; ID = 25 A

-

12

15

m

Ω

resistance

T

j = 175˚C

-

40.5

m

Ω

V

GS = 10 V; ID = 25 A

-

11.5

14.4

m

Ω

V

GS = 4.5 V; ID = 25 A

-

16

m

Ω

DYNAMIC CHARACTERISTICS

T

mb = 25˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

C

iss

Input capacitance

V

GS = 0 V; VDS = 25 V; f = 1 MHz

-

6500

8600

pF

C

oss

Output capacitance

-

550

660

pF

C

rss

Feedback capacitance

-

325

400

pF

t

d on

Turn-on delay time

V

DD = 30 V; Rload =1.2Ω;

-

45

65

ns

t

r

Turn-on rise time

V

GS = 5 V; RG = 10 Ω

-

130

195

ns

t

d off

Turn-off delay time

-

400

560

ns

t

f

Turn-off fall time

-

130

190

ns

L

d

Internal drain inductance

Measured from drain lead 6 mm

-

4.5

-

nH

from package to centre of die

L

d

Internal drain inductance

Measured from contact screw on

-

3.5

-

nH

tab to centre of die(TO220AB)

L

d

Internal drain inductance

Measured from upper edge of drain

-

2.5

-

nH

tab to centre of die(SOT404)

L

s

Internal source inductance

Measured from source lead to

-

7.5

-

nH

source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

T

j = 25˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

DR

Continuous reverse drain

-

75

A

current

I

DRM

Pulsed reverse drain current

-

313

A

V

SD

Diode forward voltage

I

F = 25 A; VGS = 0 V

-

0.85

1.2

V

I

F = 75 A; VGS = 0 V

-

1.1

-

V

t

rr

Reverse recovery time

I

F = 75 A; -dIF/dt = 100 A/µs;

-

60

-

ns

Q

rr

Reverse recovery charge

V

GS = -10 V; VR = 30 V

-

0.24

-

µC

November 1999

2

Rev 1.000

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