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BUK9515-100A Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUK9515-100A Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 9 page Philips Semiconductors Product specification TrenchMOS transistor BUK9515-100A Logic level FET BUK9615-100A AVALANCHE LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT W DSS Drain-source non-repetitive I D = 35 A; VDD ≤ 25 V; - - 120 mJ unclamped inductive turn-off V GS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C energy Fig.1. Normalised power dissipation. PD% = 100 ⋅P D/PD 25 ˚C = f(Tmb) Fig.2. Normalised continuous drain current. ID% = 100 ⋅I D/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V Fig.3. Safe operating area. T mb = 25 ˚C I D & IDM = f(VDS); IDM single pulse; parameter tp Fig.4. Transient thermal impedance. Z th j-mb = f(t); parameter D = tp/T 0 20 40 60 80 100 120 140 160 180 Tmb / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 1 10 100 1 10 100 1000 ID/A VDS/V RDS(ON) = VDS/ID tp = 100mS 10mS 1mS 100uS 1uS DC 0 20 40 60 80 100 120 140 160 180 Tmb / C ID% Normalised Current Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 0.00001 0.001 0.1 10 0.001 0.01 0.1 1 D = tp tp T T P t D Zth / (K/W) t/S D = 0.5 0.2 0.1 0.05 0.02 0 November 1999 3 Rev 1.000 |
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