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M58WR032FB70ZB6F Datasheet(PDF) 11 Page - STMicroelectronics

Part # M58WR032FB70ZB6F
Description  32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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M58WR032FB70ZB6F Datasheet(HTML) 11 Page - STMicroelectronics

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M58WR032FT, M58WR032FB
SIGNAL DESCRIPTIONS
See Figure 2., Logic Diagram and Table 1., Signal
Names, for a brief overview of the signals connect-
ed to this device.
Address Inputs (A0-A20). The Address Inputs
select the cells in the memory array to access dur-
ing Bus Read operations. During Bus Write opera-
tions they control the commands sent to the
Command Interface of the internal state machine.
Data Input/Output (DQ0-DQ15). The Data I/O
outputs the data stored at the selected address
during a Bus Read operation or inputs a command
or the data to be programmed during a Bus Write
operation.
Chip Enable (E). The Chip Enable input acti-
vates the memory control logic, input buffers, de-
coders and sense amplifiers. When Chip Enable is
at VILand Reset is at VIH the device is in active
mode. When Chip Enable is at VIH the memory is
deselected, the outputs are high impedance and
the power consumption is reduced to the stand-by
level.
Output Enable (G). The Output Enable controls
data outputs during the Bus Read operation of the
memory.
Write Enable (W). The Write Enable controls the
Bus Write operation of the memory’s Command
Interface. The data and address inputs are latched
on the rising edge of Chip Enable or Write Enable
whichever occurs first.
Write Protect (WP). Write Protect is an input
that gives an additional hardware protection for
each block. When Write Protect is at VIL, the Lock-
Down is enabled and the protection status of the
Locked-Down blocks cannot be changed. When
Write Protect is at VIH, the Lock-Down is disabled
and the Locked-Down blocks can be locked or un-
locked. (refer to Table 13., Lock Status).
Reset (RP). The Reset input provides a hard-
ware reset of the memory. When Reset is at VIL,
the memory is in reset mode: the outputs are high
impedance and the current consumption is re-
duced to the Reset Supply Current IDD2. Refer to
Table 18., DC Characteristics - Currents, for the
value of IDD2. After Reset all blocks are in the
Locked state and the Configuration Register is re-
set. When Reset is at VIH, the device is in normal
operation. Exiting reset mode the device enters
asynchronous read mode, but a negative transi-
tion of Chip Enable or Latch Enable is required to
ensure valid data outputs.
The Reset pin can be interfaced with 3V logic with-
out any additional circuitry. It can be tied to VRPH
(refer to Table 19., DC Characteristics - Voltages).
Latch Enable (L). Latch Enable latches the ad-
dress bits on its rising edge. The address
latch is transparent when Latch Enable is at
VIL and it is inhibited when Latch Enable is at
VIH. Latch Enable can be kept Low (also at
board level) when the Latch Enable function
is not required or supported.
Clock (K). The clock input synchronizes the
memory to the microcontroller during synchronous
read operations; the address is latched on a Clock
edge (rising or falling, according to the configura-
tion settings) when Latch Enable is at VIL. Clock is
don't care during asynchronous read and in write
operations.
Wait (WAIT). Wait is an output signal used during
synchronous read to indicate whether the data on
the output bus are valid. This output is high imped-
ance when Chip Enable is at VIH or Reset is at VIL.
It can be configured to be active during the wait cy-
cle or one clock cycle in advance. The WAIT signal
is not gated by Output Enable.
VDD Supply Voltage . VDD provides the power
supply to the internal core of the memory device.
It is the main power supply for all operations
(Read, Program and Erase).
VDDQ Supply Voltage. VDDQ provides the power
supply to the I/O pins and enables all Outputs to
be powered independently from VDD. VDDQ can be
tied to VDD or can use a separate supply.
VPP Program Supply Voltage. VPP is a power
supply pin. The Supply Voltage VDD and the Pro-
gram Supply Voltage VPP can be applied in any or-
der. The pin can also be used as a control input.
The two functions are selected by the voltage
range applied to the pin. If VPP is kept in a low volt-
age range (0V to VDDQ) VPP is seen as a control
input. In this case a voltage lower than VPPLK
gives an absolute protection against program or
erase, while VPP > VPP1 enables these functions
(see Tables 18 and 19, DC Characteristics for the
relevant values). VPP is only sampled at the begin-
ning of a program or erase; a change in its value
after the operation has started does not have any
effect and program or erase operations continue.
If VPP is in the range of VPPH it acts as a power
supply pin. In this condition VPP must be stable un-
til the Program/Erase algorithm is completed.
VSS Ground. VSS ground is the reference for the
core supply. It must be connected to the system
ground.
VSSQ Ground. VSSQ ground is the reference for
the input/output circuitry driven by VDDQ. VSSQ
must be connected to VSS.
Note: Each device in a system should have
VDD, VDDQ and VPP decoupled with a 0.1µF ce-
ramic capacitor close to the pin (high frequen-
cy,
inherently
low
inductance
capacitors


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