Transistors

1

Publication date: April 2003

SJC00201BED

Silicon NPN epitaxial planar type

For low-frequency amplification

For stroboscope

■ Features

• Low collector-emitter saturation voltage V

CE(sat)

• Satisfactory operation performances at high efficiency with the low-

voltage power supply.

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

40

V

Collector-emitter voltage (Base open)

20

V

Emitter-base voltage (Collector open)

7V

Collector current

5A

Peak collector current

8A

Collector power dissipation

1W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

V

Emitter-base voltage (Collector open)

V

Collector-base cutoff current (Emitter open)

= 10 V, I

E

= 0

0.1

µA

Emitter-base cutoff current (Collector open)

0.1

µA

1

2

180

600



150

1

1

V

Transition frequency

150

MHz

Collector output capacitance

50

pF

(Common base, input open circuited)

■ Electrical Characteristics T

Unit: mm

(1.27)

(1.27)

0.45

+0.2

–0.1

0.45

+0.2

–0.1

13

2

1 : Emitter

2 : Collector

3 : Base

EIAJ : SC-51

TO-92L-A1 Package

Rank

P

Q

R

180 to 270

230 to 380

340 to 600

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Pulse measurement

*2: Rank classification

Note) The part number in the parenthesis shows conventional part number.