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FDS6681Z Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FDS6681Z Datasheet(HTML) 5 Page - Fairchild Semiconductor |
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5 / 6 page  FDS6681Z Rev B (W) Typical Characteristics 0 2 4 6 8 10 0 40 80 120 160 200 Qg, GATE CHARGE (nC) ID = -20A VDS = -10V -20V -15V 0 2000 4000 6000 8000 10000 0 5 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Ciss Crss Coss f = 1MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms RDS(ON) LIMIT VGS = -10V SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 10ms 10s 100us 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 125°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) * RJA RθJA = 125 °C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. |
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