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FDS6681Z Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. FDS6681Z
Description  30 Volt P-Channel PowerTrench MOSFET
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6681Z Datasheet(HTML) 1 Page - Fairchild Semiconductor

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June 2005
©2005 Fairchild Semiconductor Corporation
FDS6681Z Rev B (W)
FDS6681Z
30 Volt P-Channel PowerTrench
®
MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
® process that
has been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and
load switching applications common in Notebook
Computers and Portable Battery Packs.
Features
• –20 A, –30 V.
RDS(ON) = 4.6 mΩ @ VGS = –10 V
RDS(ON) = 6.5 mΩ @ VGS = –4.5 V
• Extended V
GSS range (–25V) for battery applications
• HBM ESD protection level of 8kV typical (note 3)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Termination is Lead-free and RoHS Compliant
S
D
S
S
SO-8
D
D
D
G
4
5
3
6
2
7
1
8
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–30
V
VGSS
Gate-Source Voltage
±25
V
Drain Current
– Continuous
(Note 1a)
–20
A
ID
– Pulsed
–105
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1.0
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6681Z
FDS6681Z
13’’
12mm
2500 units


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