BC847BPDXV6T5 datasheet(3/8 Pages) ONSEMI

Part #	BC847BPDXV6T5

Description	Dual General Purpose Transistor

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BC847BPDXV6T1, BC847BPDXV6T5

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ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector - Emitter Breakdown Voltage

(IC = -10 mA)

V(BR)CEO

-45

-

V

Collector - Emitter Breakdown Voltage

(IC = -10 µA, VEB = 0)

V(BR)CES

-50

-

V

Collector - Base Breakdown Voltage

(IC = -10 mA)

V(BR)CBO

-50

-

V

Emitter - Base Breakdown Voltage

(IE = -1.0 mA)

V(BR)EBO

-5.0

-

V

Collector Cutoff Current (VCB = -30 V)

Collector Cutoff Current (VCB = -30 V, TA = 150°C)

ICBO

-

-15

-4.0

nA

µA

ON CHARACTERISTICS

DC Current Gain

(IC = -10 µA, VCE = -5.0 V)

(IC = -2.0 mA, VCE = -5.0 V)

hFE

-

200

150

290

-

475

-

Collector - Emitter Saturation Voltage

(IC = -10 mA, IB = -0.5 mA)

(IC = -100 mA, IB = -5.0 mA)

VCE(sat)

-

-0.3

-0.65

V

Base - Emitter Saturation Voltage

(IC = -10 mA, IB = -0.5 mA)

(IC = -100 mA, IB = -5.0 mA)

VBE(sat)

-

-0.7

-0.9

-

V

Base - Emitter On Voltage

(IC = -2.0 mA, VCE = -5.0 V)

(IC = -10 mA, VCE = -5.0 V)

VBE(on)

-0.6

-

-0.75

-0.82

V

SMALL- SIGNAL CHARACTERISTICS

Current - Gain - Bandwidth Product

(IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz)

fT

100

-

MHz

Output Capacitance

(VCB = -10 V, f = 1.0 MHz)

Cob

-

4.5

pF

Noise Figure

(IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 kΩ,

f = 1.0 kHz, BW = 200 Hz)

NF

-

10

dB

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