M36LLR8760D1 datasheet(7/19 Pages) STMICROELECTRONICS

Part #	M36LLR8760D1

Description	256 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

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M36LLR8760T1, M36LLR8760D1, M36LLR8760M1, M36LLR8760B1

SIGNAL DESCRIPTIONS

See Figure 2., Logic Diagram and Table 1., Signal

Names, for a brief overview of the signals connect-

ed to this device.

Address Inputs (A0-A23). Addresses

A0-A21

are common inputs for the Flash memory and

PSRAM components. A22 is common to the two

Flash memory components whereas A23 is an ad-

dress input for the 256 Mbit Flash memory compo-

nent only.

The Address Inputs select the cells in the memory

array to access during Bus Read operations. Dur-

ing Bus Write operations they control the com-

mands sent to the Command Interface of the

internal state machine. The Flash memories are

accessed through the Chip Enable signal (EF) and

through the Write Enable signal (WF), while the

PSRAM is accessed through the Chip Enable sig-

nal (EP) and the Write Enable signal (WP).

It is not allowed to have EF Low, and EP Low at the

same time.

Data Input/Output (DQ0-DQ15). The Data I/O

output the data stored at the selected address dur-

ing a Bus Read operation or input a command or

the data to be programmed during a Bus Write op-

eration.

For the PSRAM component, the upper Byte Data

Inputs/Outputs (DQ8-DQ15) carry the data to or

from the upper part of the selected address when

Upper Byte Enable (UBP) is driven Low. The lower

Byte Data Inputs/Outputs (DQ0-DQ7) carry the

data to or from the lower part of the selected ad-

dress when Lower Byte Enable (LBP) is driven

Low. When both UBP and LBP are disabled, the

Data Inputs/ Outputs are high impedance.

Latch Enable (L). The Latch Enable pin is com-

mon to the Flash memory and PSRAM compo-

nents.

For details of how the Latch Enable signal be-

haves, please refer to the datasheets of the re-

spective memory components: M69KB096AA for

the

PSRAM

and

M30L0R8000(T/B)0

and

M58LR128GT/B for Flash 1 and Flash 2, respec-

tively.

Clock (K). The Clock input pin is common to the

Flash memory and PSRAM components.

For details of how the Clock signal behaves,

please refer to the datasheets of the respective

memory

components:

M69KB096AA

for

the

PSRAM

and

M30L0R8000(T/B)0

and

M58LR128GT/B for Flash 1 and Flash 2, respec-

tively.

Wait (WAIT). WAIT is an output pin common to

the Flash memory and PSRAM components. How-

ever the WAIT signal does not behave in the same

way for the PSRAM and the Flash memories.

For details of how it behaves, please refer to the

M69KB096AA datasheet for the PSRAM and to

the

M30L0R8000T/B0

and

M58LR128GT/B

datasheets for Flash 1 and Flash 2, respectively.

Flash Chip Enable Inputs (EF1, EF2). The

Flash Chip Enable inputs activate the control logic,

input buffers, decoders and sense amplifiers of the

Flash memory component selected (EF1 is used to

select Flash 1, EF2 is used to select Flash 2).

When Chip Enable is Low, VIL, and Reset is High,

VIH, the device is in active mode. When Chip En-

able is at VIH the corresponding Flash memory are

deselected, the outputs are high impedance and

the power consumption is reduced to the standby

level.

It is not allowed to have EF1 at VIL, EF2 at VIL and

EP at VIL at the same time. Only one memory com-

ponent can be enabled at a time.

Flash Output Enable Inputs (GF1, GF2). The

Output Enable pins control the data outputs during

Flash memory Bus Read operations.

Flash Write Enable (WF). The

Write

Enable

controls the Bus Write operation of the Flash

memories’ Command Interface. The data and ad-

dress inputs are latched on the rising edge of Chip

Enable or Write Enable whichever occurs first.

Flash Write Protect (WPF). Write Protect is an

input that gives an additional hardware protection

for each block. When Write Protect is Low, VIL,

Lock-Down is enabled and the protection status of

the Locked-Down blocks cannot be changed.

When Write Protect is at High, VIH, Lock-Down is

disabled and the Locked-Down blocks can be

locked or unlocked. (See the Lock Status Table in

the

M30L0R8000(T/B)0

and

M58LR128GT/B

datasheets).

Flash Reset (RPF). The Reset input provides a

hardware reset of the Flash memories. When Re-

set is at VIL, the memory is in Reset mode: the out-

puts

are

high

impedance

and

the

current

consumption is reduced to the Reset Supply Cur-

rent IDD2. Refer to Table 6., Flash 1 DC Character-

istics - Currents, for the value of IDD2. After Reset

all blocks are in the Locked state and the Configu-

ration Register is reset. When Reset is at VIH, the

device is in normal operation. Exiting Reset mode

the device enters Asynchronous Read mode, but

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