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MB81ES653225-12L Datasheet(PDF) 2 Page - Fujitsu Component Limited. |
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MB81ES653225-12L Datasheet(HTML) 2 Page - Fujitsu Component Limited. |
2 / 10 page MB81ES653225-12/-12L 2 ■ FEATURES •1 M word × 32 bit × 2 banks organization •Low power supply - VDD : + 1.8 V ± 0.15 V - VDDQ : + 1.8 V ± 0.15 V • 1.8 V-CMOS I/O interface • 8 K refresh cycles every 32 ms • Auto-and Self-refresh • Two banks operation • Burst read/write operation and burst read/single write operation capability • Programmable burst type, burst length, and CAS Latency • Programmable page length function • Programmable Partial Array Self Refresh (PASR) • Programmable Temperature Compensated Self Refresh (TCSR) • Deep power down mode • Extended temperature operation - MB81ES653225-12 : From 0 °C to +85 °C (Ta) - MB81ES653225-12L : From −25 °C to +85 °C (Ta) • CKE power down mode • Output enable and input data mask • Disable function for TEST • Self burnin function for TEST • Built In Self Test (BIST) function for TEST |
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