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SI5404BDC Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI5404BDC Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 3 page SPICE Device Model Si5404BDC Vishay Siliconix www.vishay.com Document Number: 73127 2 08-Sep-04 SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.1 V On-State Drain Current a ID(on) VDS ≥ 5 V, VGS = 4.5 V 100 A VGS = 4.5 V, ID = 5.4 A 0.022 0.022 Drain-Source On-State Resistance a rDS(on) VGS = 2.5 V, ID = 2.6 A 0.030 0.031 Ω Forward Transconductance a gfs VDS = 10 V, ID = 5.4 A 45 26 S Forward Voltage a VSD IS = 1.1 A, VGS = 0 V 0.78 0.70 V Dynamic b Total Gate Charge Qg 6.8 7 Gate-Source Charge Qgs 1.7 1.7 Gate-Drain Charge Qgd VDS = 10 V, VGS = 4.5 V, ID = 5.4 A 2 2 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. |
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