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DLFP68-16F Datasheet(PDF) 2 Page - IXYS Corporation |
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DLFP68-16F Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 22 page 2 © 2004 IXYS All rights reserved Symbols and Definitions C ies Input capacitance of IGBT C iss Input capacitance of MOSFET -di/dt Rate of decrease of forward current I C DC collector current I D Drain current I F Forward current of diode I F(AV)M Maximum average forward current at specified T h I FSM Peak one cycle surge forward current I GT Gate trigger current I R Reverse current I RM Maximum peak recovery current I T Forward current of thyristor I T(AV)M Maximum average on-state current of a thyristor at specified T h I TSM Maximum surge current of a thyristor R DS(on) Static drain-source on-state resistance R thjc Thermal resistance junction to case r T Slope resistance of a thyristor or diode (for power loss calculations) T case Case temperature T h Heatsink temperature t fi Current fall time with inductive load T j, T (vj) Junction temperature T jm, T (vj)m Maximum junction temperature t rr Reverse recovery time of a diode V CE(sat) Collector-emitter saturation voltage V CES Maximum collector-emitter voltage V DRM Maximum repetitive forward blocking voltage of thyristor V DSS Drain-source break-down voltage V F Forward voltage of diode V R Reverse voltage V RRM Maximum peak reverse voltage of thyristor or diode V T On-state voltage of thyristor V T0 Threshold voltage of thyristors or diodes (for power loss calculation only) Chip and DCB Ceramic Substrates Data book Edition 2004 Published by IXYS Semiconductor GmbH Marketing Communications Edisonstraße 15, D-68623 Lampertheim © IXYS Semiconductor GmbH All Rights reserved As far as patents or other rights of third parties are concerned, liability is only assumed for chips and DCB parts per se, not for applications, processes and circuits implemented with components or assemblies. Terms of delivery and the right to change design or specifications are reserved. Nomenclature IGBT and MOSFET Discrete IXSD 40N60A (Example) IX IXYS Die technology E NPT3 IGBT F HiPerFETTM Power MOSFET G Fast IGBT S IGBT with SCSOA capability T Standard Power MOSFET D Unassembled chip (die) 40 Current rating, 40 = 40 A N N-channel type P P-channel type 60 Voltage class, 60 = 600 V xx MOSFET A Prime RDS(on) for standard MOSFET Q Low gate charge die Q2 Low gate charge die, 2nd generation P PolarHTTM Power MOSFET L Linear Mode MOSFET IGBT -- No letter, low VCE(sat) A Or A2, std speed type B Or B2, high speed type C Or C2, very high speed type W-CWP 55-12/18 (Thyristor Example) W Package type C Chip function C = Silicon phase control thyristor W Unassembled chip P Process designator P = Planar passivated chip cathode on top 55 Current rating value of one chip in A 12/18 Voltage class, 12/18 = 1200 up to 1800 V Diode and Thyristor Chips C-DWEP 69-12 (Diode Example) C Package type D Chip function D = Silicon rectifier diode W Unassembled chip EP Process designator EP = Epitaxial rectifier diode N = Rectifier diode, cathode on top P = Rectifier diode, anode on top FN = Fast Rectifier diode, cathode on top FP = Fast Rectifier diode, anode on top 69 Current rating value of one chip in A -12 Voltage class, 12 = 1200 V Registration No.: 001947 TS2/765/17557 Registration No.: 001947 Chip-Shortform2004.pmd 26.10.2004, 12:44 2 |
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