K6R3024V1D

CMOS SRAM

Revision 1.0

- 3 -

December 2001

for AT&T

°C)

*

The above parameters are also guaranteed at industrial temperature range.

≤ 8ns) for I ≤ 20mA.

≤ 8ns) for I ≤ 20mA.

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage

3.0

3.3

3.6

V

Input High Voltage

2.0

-

V

Input Low Voltage

-0.3**

-

0.8

V

TRUTH TABLE

OE

WE

Mode

I/O

Power

H

X

X

X

X

Standby

High-Z

Standby

X

L

X

X

X

Standby

High-Z

Standby

X

X

H

X

X

Standby

High-Z

Standby

L

H

L

L

H

Read

Active

L

H

L

X

L

Write

Active

L

H

L

H

H

Outputs Disabled

High-Z

Active

ABSOLUTE MAXIMUM RATINGS*

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter

Symbol

Rating

Unit

-0.5 to 4.6

V

-0.5 to 4.6

V

Power Dissipation

2

W

Storage Temperature

-65 to 150

°C

Operating Temperature

Commercial

0 to 70

°C

Industrial

-40 to 85

°C