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IKW40T120 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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1 page 
IKW40T120 ^ TrenchStop Series Power Semiconductors 1 Preliminary / Rev. 1 Jul-02 Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • Best in class TO247 • Short circuit withstand time – 10 µs • Designed for : - Frequency Converters - Uninterrupted Power Supply • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI • Low Gate Charge • Very soft, fast recovery anti-parallel EmCon HE diode • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Package Ordering Code IKW40T120 1200V 40A 1.8V 150 °C TO-247AC Q67040-S4520 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current TC = 25°C TC = 100°C I C 75 40 Pulsed collector current, tp limited by Tjmax I Cp ul s 105 Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C - 105 Diode forward current TC = 25°C TC = 100°C I F 80 40 Diode pulsed current, tp limited by Tjmax I Fp ul s 105 A Gate-emitter voltage VGE ±20 V Short circuit withstand time 1) VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C t SC 10 µs Power dissipation TC = 25°C Ptot 270 W Operating junction temperature T j -40...+150 Storage temperature T st g -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 °C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. P-TO-247-3-1 (TO-247AC) G C E |
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