HSMP-3810 datasheet(3/9 Pages) HP

Part #	HSMP-3810

Description	Surface Mount RF PIN Low Distortion Attenuator Diodes

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Manufacturer	HP [Agilent(Hewlett-Packard)]

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Typical Parameters at T

C = 25°C

Part Number

Series Resistance

Carrier Lifetime

Reverse Recovery Time

Total Capacitance

HSMP-

R

S (Ω)

τ (ns)

T

rr (ns)

C

T (pF)

381x

75

1500

300

0.27 @ 50 V

Test Conditions

I

F = 1 mA

I

F = 50 mA

V

R = 10 V

f = 1 MHz

f = 100 MHz

I

R = 250 mA

I

F = 20 mA

90% Recovery

Typical Parameters at T

C = 25°C (unless otherwise noted), Single Diode

10000

1000

100

10

1

0.01

0.1

1

10

100

IF – FORWARD BIAS CURRENT (mA)

T

A = +85°C

T

A = +25°C

T

A = –55°C

Figure 2. RF Resistance vs. Forward

Bias Current.

0.15

0.30

0.25

0.20

0.35

0.40

0.45

02

6

410 12

816

14

18 20

REVERSE VOLTAGE (V)

Figure 1. RF Capacitance vs. Reverse

Bias.

1 MHz

30 MHz

frequency>100 MHz

120

110

100

90

80

70

60

50

40

1000

100

10

Diode Mounted as a

Series Attenuator

in a 50 Ohm Microstrip

and Tested at 123 MHz

DIODE RF RESISTANCE (OHMS)

Figure 3. 2nd Harmonic Input

Intercept Point vs. Diode RF

Resistance.

100

10

1

0.1

0.01

0

0.2

0.4

0.6

0.8

1.0

1.2

VF – FORWARD VOLTAGE (mA)

Figure 4. Forward Current vs.

Forward Voltage.

125

°C 25°C –50°C

INPUT

RF IN/OUT

Figure 5. Four Diode

π Attenuator. See Application Note 1048

for Details.

FIXED

BIAS

VOLTAGE

VARIABLE BIAS

Typical Applications for Multiple Diode Products

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HSMP-3810 Datasheet(PDF) 3 Page - Agilent(Hewlett-Packard)

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