41
Crystal oscillator
#4
#3
#1
0.5
5.08
#2
10.5 Max.
Recommended soldering pattern
External dimensions
(Unit: mm)
(Unit: mm)
18.4320C
E
PTF9352A
(1.0)
(1.0)
3.6
5.08
1.3
Metal may be exposed on the top or bottom of this product.
This won't affect any quality, reliability or electrical spec.
1
2
3
4
OE or ST
GND
OUT
VDD
NO.
Pin terminal
Note.
OE Pin (PTF, PH, PCE, PDE, PTW, PHW, PCW)
OE pin - "H" or "open" : Specified frequency output.
OE pin - "L" : Output is high impedance.
ST pin (STW, SHW, SCW)
ST pin - "H" or "open" : Specified frequency output.
ST pin - "L" : Output is low level (weak pull - down), oscillation stops.
ST pin (SCE)
ST pin - "H" or "open" : Specified frequency output.
ST pin - "L" : Output is high impedance., oscillation stops.
Specifications (characteristics)
HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-636 series
Note: • Unless otherwise stated,characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition.
• External by-pass capacitor is required.
• A small SMD that enables high-density mounting.
• A general-purpose device with builtin heat-resisting cylindrical AT-cut
crystal and allowing almost the same temperature condition for soldering
as SMD IC.
• Low current consumption by output enable function(OE) or standby
function(ST).
Actual size
Product number (please refer to page 1)
Q33 6 3 6 xxx x x xx 0 0
Item
Symbol
Specifications
Remarks
SG-636PTF
SG-636PH
SG-636SCE/PCE
SG-636PDE
Output frequency range
f0
2.21675 MHz to
41.0001 MHz to
2.21675 MHz to
2.21675MHz to
41.0000 MHz
70.0000 MHz
40.0000 MHz
40.0000MHz
Refer to page 31. "Frequency range"
Power source Max. supply voltage VDD-GND
-0.5 V to +7.0 V
voltage
Operating voltage
VDD
5.0 V ±0.5 V
3.3 V ±0.3 V
2.5 V ±0.25 V
Temperature
Storage temperature
TSTG
-55 °C to +100 °C
Stored as bare product after unpacking
range
Operating temperature
TOPR
-20 °C to +70 °C
Refer to page 31. "Frequency range"
Frequency stability
∆f/f0
C: ±100 x 10-6
Current consumption
lop
17 mA Max.
35 mA Max.
9 mA Max.
5 mA Max.
No load condition
Output disable current
IOE
10 mA Max.
20 mA Max.
5 mA Max.
3 mA Max.
OE=GND, ST=GND 2 µA Max.(SCE)
Duty
CMOS level
tw/t
40 % to 60 %
45 % to 55 %
CMOS load: 1/2 VDD leve l
TTL level
45 % to 55 %
—
TTL load: 1.4 V level
Output voltage
VOH
VDD -0.4 V Min.
IOH
=-8 mA (PTF) /-4 mA (PH / SCE / PCE / PDE)
VOL
0.4 V Max.
IOL =16 mA (PTF) /4 mA (PH / SCE / PCE / PDE)
Output load condition CMOS level
CL
50 pF Max.
20 pF Max.( ≤ 55 MHz)
30 pF Max.
15 pF Max.
(fan out)
15 pF Max.( > 55 MHz)
TTL level
N
10 TTL Max.
5 LSTTL Max.
—
CL<
_15 pF
Output enable/disable input voltage
VIH
2.0 V Min.
0.8 VDD Min.
OE,ST (SCE)
VIL
0.8 V Max.
0.2 VDD Max.
Output rise time
CMOS level
tTLH
7 ns Max.
5 ns Max.
CMOS load: 20 %→80 % VDD
TTL level
5 ns Max.
—
TTL load: 0.4 V→2.4 V
Output fall time
CMOS level
tTHL
7 ns Max.
5 ns Max.
CMOS load: 80 %→20 % VDD
TTL level
5 ns Max.
—
TTL load: 2.4 V→0.4 V
Oscillation start up time
tosc
4 ms Max.
10 ms Max.
4 ms Max.
Time at minimum operating voltage to be O s
Aging
fa
±5 x 10-6 /year Max.
Ta=+25 °C,VDD=5.0 V / 3.3 V / 2.5 V,first year
Shock resistance
S.R.
±20 x 10-6 Max.
Three drops on a hard board from 750 mm or excitation test
with 29400 m/s2 x 0.3 ms x 1/2 sine wave in 3 directions
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