TE28F640B3BC100 datasheet(7/58 Pages) INTEL

Part #	TE28F640B3BC100

Description	3 Volt Advanced Boot Block Flash Memory

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Manufacturer	INTEL [Intel Corporation]

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28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

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1

1.0

Introduction

This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory

family, which is optimized for low power, portable systems. This family of products features

1.65 V–2.5 V or 2.7 V–3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read,

program, and erase operations. In addition this family is capable of fast programming at 12 V.

Throughout this document, the term “2.7 V” refers to the full voltage range 2.7 V–3.6 V (except

where noted otherwise) and “VPP = 12 V” refers to 12 V ±5%. Section 1.0 and 2.0 provide an

overview of the flash memory family including applications, pinouts and pin descriptions. Section

3.0 describes the memory organization and operation for these products. Sections 4.0 and 5.0

contain the operating specifications. Finally, Sections 6.0 and 7.0 provide ordering and other

reference information.

The 3 Volt Advanced Boot Block flash memory features:

• Enhanced blocking for easy segmentation of code and data or additional design flexibility

• Program Suspend to Read command

• VCCQ input of 1.65 V–2.5 V on all I/Os. See Figures 1 through 4 for pinout diagrams and

VCCQ location

• Maximum program and erase time specification for improved data storage.

NOTES:

1. 32-Mbit and 64-Mbit densities not available in 40-lead TSOP.

2. 4-Mbit density not available in

µBGA* CSP.

3. VCCMax is 3.3 V on 0.25µm 32-Mbit devices.

4. 4- and 64-Mbit densities not available on 48-Ball VF BGA.

Table 1.

3 Volt Advanced Boot Block Feature Summary

Feature

28F004B3(2), 28F008B3,

28F016B3

28F400B3(2), 28F800B3,

28F160B3, 28F320B3(3),

28F640B3

Reference

VCC Read Voltage

2.7 V– 3.6 V

Section 4.2,

Section 4.4

VCCQ I/O Voltage

1.65 V–2.5 V or 2.7 V– 3.6 V

Section 4.2, 4.4

VPP Program/Erase Voltage

2.7 V– 3.6 V or 11.4 V– 12.6 V

Section 4.2, 4.4

Bus Width

8 bit

16 bit

Table 3

Speed

70 ns, 80 ns, 90 ns, 100 ns, 110 ns

Section 4.5

Memory Arrangement

512 Kbit x 8 (4 Mbit)

1024 Kbit x 8 (8 Mbit),

2048 Kbit x 8 (16 Mbit)

256 Kbit x 16 (4 Mbit),

512 Kbit x 16 (8 Mbit),

1024 Kbit x 16 (16 Mbit),

2048 Kbit x 16 (32 Mbit),

4096 Kbit x 16 (64 Mbit)

Section 2.2

Blocking (top or bottom)

Eight 8-Kbyte parameter blocks and

Seven 64-Kbyte blocks (4 Mbit) or

Fifteen 64-Kbyte blocks (8 Mbit) or

Thirty-one 64-Kbyte main blocks (16 Mbit)

Sixty-three 64-Kbyte main blocks (32 Mbit)

One hundred twenty-seven 64-Kbyte main blocks (64 Mbit)

Section 2.2

Appendix C

Locking

WP# locks/unlocks parameter blocks

All other blocks protected using VPP

Section 3.3

Table 8

Operating Temperature

Extended: –40

°C to +85 °C

Section 4.2, 4.4

Program/Erase Cycling

100,000 cycles

Section 4.2, 4.4

Packages

40-lead TSOP(1),

48-Ball

µBGA* CSP(2)

48-Lead TSOP,

48-Ball

µBGA CSP(2),

48-Ball VF BGA(4)

Figure 3, Figure 4

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