GE28F320B3TC90 datasheet(25/58 Pages) INTEL

Part #	GE28F320B3TC90

Description	3 Volt Advanced Boot Block Flash Memory

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Manufacturer	INTEL [Intel Corporation]

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28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\

19

4.2

Operating Conditions

NOTES:

1. VCC1, VCCQ1, and VPP3 must share the same supply when all three are between 2.7 V and 3.6 V.

2. VCCMax is 3.3 V on 0.25µm 32-Mbit devices.

3. During read operations or idle time, 5 V may be applied to VPP indefinitely. VPP must be at valid levels for

program and erase operations

4. Applying VPP = 11.4 V–12.6 V during a program/erase can only be done for a maximum of 1000 cycles on

the main blocks and 2500 cycles on the parameter blocks. VPP may be connected to 12 V for a total of

80 hours maximum. See Section 3.4 for details.

4.3

Capacitance

TA = 25 °C, f = 1 MHz

NOTE: Sampled, not 100% tested.

Symbol

Parameter

Notes

Min

Max

Units

TA

Operating Temperature

–40

+85

°C

VCC1

VCC Supply Voltage

1, 2

2.7

3.6

Volts

VCC2

2.7

2.85

VCC3

2.7

3.3

VCCQ1

I/O Supply Voltage

12.7

3.6

Volts

VCCQ2

1.65

2.5

VCCQ3

1.8

2.5

VPP1

Program and Erase Voltage

12.7

3.6

Volts

VPP2

2.7

2.85

VPP3

2.7

3.3

VPP4

3, 4

11.4

12.6

Cycling

Block Erase Cycling

4

100,000

Cycles

Sym

Parameter

Notes

Typ

Max

Units

Conditions

CIN

Input Capacitance

1

6

8

pF

VIN = 0 V

COUT

Output Capacitance

1

10

12

pF

VOUT = 0 V

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GE28F320B3TC90 Datasheet(PDF) 25 Page - Intel Corporation

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