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HFB30PA60CPBF Datasheet(PDF) 1 Page - International Rectifier |
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HFB30PA60CPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 6 page Features Description International Rectifier's HFA30PA60C is a state of the art center tap ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 volts and 15 amps per Leg continuous current, the HFA30PA60C is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA30PA60C is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. Ultrafast, Soft Recovery Diode HEXFREDTM HFA30PA60CPbF Parameter Max. Units VR Cathode-to-Anode Voltage 600 V IF @ TC = 100°C Continuous Forward Current 15 IFSM Single Pulse Forward Current 150 IFRM Maximum Repetitive Forward Current 60 PD @ TC = 25°C Maximum Power Dissipation 74 PD @ TC = 100°C Maximum Power Dissipation 29 TJ Operating Junction and TSTG Storage Temperature Range Absolute Maximum Ratings (per Leg) -55 to +150 W A C VR = 600V VF(typ.)* = 1.2V IF(AV) = 15A Qrr (typ.)= 80nC IRRM (typ.) = 4.0A trr(typ.) = 19ns di(rec)M/dt (typ.)* = 160A/µs * 125°C TO-247AC 1 www.irf.com 1 3 2 PD - 95685A Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count 10/18/04 |
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