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SKW30N60HS Datasheet(PDF) 4 Page - Infineon Technologies AG

Part # SKW30N60HS
Description  HIGH SPEED IGBT IN NPT-TECHNOLOGY
Download  14 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SKW30N60HS Datasheet(HTML) 4 Page - Infineon Technologies AG

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SKW30N60HS
^
Power Semiconductors
4
Rev. 2 Aug-02
Switching Characteristic, Inductive Load,
at Tj=150 °C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
t d( o n)
-16
Rise time
t r
-13
Turn-off delay time
t d( of f)
-
122
Fall time
t f
-29
ns
Turn-on energy
Eon
-0.78
Turn-off energy
Eoff
-0.48
Total switching energy
Ets
T j =150° C
VCC =400V, IC =30A,
VGE =0/15V,
R G = 1 .8 Ω
L σ
1)
=60nH,
C σ
1) =40pF
Energy losses include
“tail” and diode
reverse recovery.
-1.26
mJ
Turn-on delay time
t d( o n)
-20
Rise time
t r
-19
Turn-off delay time
t d( of f)
-
274
Fall time
t f
-27
ns
Turn-on energy
Eon
-0.91
Turn-off energy
Eoff
-0.70
Total switching energy
Ets
T j =150° C
VCC =400V, IC =30A,
VGE =0/15V,
R G = 1 1Ω
L σ
1)
=60nH,
C σ
1) =40pF
Energy losses include
“tail” and diode
reverse recovery.
-1.61
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t rr
t S
t F
-
-
-
190
30
160
ns
Diode reverse recovery charge
Q rr
-2.0
µC
Diode peak reverse recovery current
I rr m
-24
A
Diode peak rate of fall of reverse
recovery current during tb
dirr /d t
T j =150° C
VR =400 V, IF =30A,
diF/dt =1250A/ µs
-
480
A/
µs
1) Leakage inductance Lσ and Stray capacity Cσ due to test circuit in Figure E.


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