IS61C256AH-25NI datasheet(3/8 Pages) ISSI

Part #	IS61C256AH-25NI

Description	32K x 8 HIGH-SPEED CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

Direct Link	http://www.issi.com

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3 / 8 page

Integrated Silicon Solution, Inc. — 1-800-379-4774

3

SR020-1O

05/24/99

IS61C256AH

ISSI®

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

-10

-12

-15

-20

-25

Symbol

Parameter

Test Conditions

Min. Max.

Unit

ICC

Vcc Dynamic Operating

VCC = Max.,

CE = VIL

Com.

—

165

—

155

—

145

—

135

—

125

mA

Supply Current

IOUT = 0 mA, f = fMAX

Ind.

—

165

—

155

—

145

—

135

ISB1

TTL Standby Current

VCC = Max.,

Com.

—

25

—

25

—

25

—

25

—

25

mA

(TTL Inputs)

VIN = VIH or VIL

Ind.

—

30

—

30

—

30

—

30

CE ≥ VIH, f = 0

ISB2

CMOS Standby

VCC = Max.,

Com.

—

2

—

2

—

2

—

2

—

2

mA

Current (CMOS Inputs)

CE ≥ VCC – 0.2V,

Ind.

—

10

—

10

—

10

—

10

VIN

≥ VCC – 0.2V, or

VIN

≤ 0.2V, f = 0

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

OPERATING RANGE

Range

Ambient Temperature

Speed

VCC

Commercial

0

°C to +70°C

-10, -12

5V

± 5%

-15, -20, -25

5V

± 10%

Industrial

–40

°C to +85°C

-12

5V

± 5%

-15, -20, -25

5V

± 10%

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

Test Conditions

Min.

Max.

Unit

VOH

Output HIGH Voltage

VCC = Min., IOH = –4.0 mA

2.4

—

V

VOL

Output LOW Voltage

VCC = Min., IOL = 8.0 mA

—

0.4

V

VIH

Input HIGH Voltage

2.2

VCC + 0.5

V

VIL

Input LOW Voltage(1)

–0.5

0.8

V

ILI

Input Leakage

GND

≤ VIN ≤ VCC

Com.

–5

5

µA

Ind.

–10

10

ILO

Output Leakage

GND

≤ VOUT ≤ VCC,

Com.

–5

5

µA

Outputs Disabled

Ind.

–10

10

Note:

1. VIL = –3.0V for pulse width less than 10 ns.

CAPACITANCE(1,2)

Symbol

Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

8

pF

COUT

Output Capacitance

VOUT = 0V

10

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25

°C, f = 1 MHz, Vcc = 5.0V.

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