 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
K5D5657ACM-F015 Datasheet(PDF) 3 Page - Samsung semiconductor |
|
||||||||||||||||||||||||||||||
K5D5657ACM-F015 Datasheet(HTML) 3 Page - Samsung semiconductor |
|
|
3 / 74 page  K5D5657ACM-F015 Revision 0.1 September 2003 - 3 - Advance MCP MEMORY Preliminary GENERAL DESCRIPTION FEATURES <Common> • Operating Temperature : -25°C ~ 85°C • Package : 107-ball FBGA Type - 10.5x13mm, 0.8mm pitch <NAND> • Power Supply Voltage : 1.7~1.95V • Organization - Memory Cell Array : (32M + 1024K)bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte • Page Read Operation - Page Size : (512 + 16)Byte - Random Access : 10 µs(Max.) - Serial Page Access : 50ns(Min.) • Fast Write Cycle Time - Program time : 200 µs(Typ.) - Block Erase Time : 2ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years • Command Register Operation • Intelligent Copy-Back • Unique ID for Copyright Protection <Mobile SDRAM> • Power Supply Voltage : 1.65~1.95V • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength) • DQM for masking. • Auto refresh. • 64ms refresh period (4K cycle). Multi-Chip Package MEMORY 256M Bit (32Mx8) Nand Flash / 256M Bit (4Mx16x4Banks) Mobile SDRAM The K5D5657ACM is a Multi Chip Package Memory which combines 256Mbit Nand Flash Memory and 256Mbit synchronous high data rate Dynamic RAM. 256Mbit NAND Flash memory is organized as 32M x8 bits and 256Mbit SDRAM is organized as 4M x16 bits x4 banks. In 256Mbit NAND Flash, a 528-Byte page program can be typically achieved within 200us and an 16K-Byte block erase can be typi- cally achieved within 2ms. In serial read operation, a byte can be read by 50ns. DQ pins serve as the ports for address and data input/output as well as command inputs. Even the write-intensive systems can take advantage of FLASH ′s extended reliability of 100K program/erase cycles with real time mapping-out algorithm. These algorithms have been implemented in many mass storage applications. In 256Mbit SDRAM, Synchronous design make a device controlled precisely with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. The K5D5657ACM is suitable for use in data memory of mobile communication system to reduce not only mount area but also power consumption. This device is available in 107-ball FBGA Type. |
Similar Part No. - K5D5657ACM-F015 |
|
Similar Description - K5D5657ACM-F015 |
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
