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DAM14N60S Datasheet(PDF) 2 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM14N60S Datasheet(HTML) 2 Page - DACO SEMICONDUCTOR CO.,LTD. |
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2 / 4 page  Electrical Characteristics @ TJ =25°C (unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V IDS=250uA 60 - - V Zero Gate Voltage Drain Current IDSS VGS=0V VDS=60V - - 1 uA Gate-Body Leakage IGSS VGS=±25V VDS=0V - - ±100 nA ON Characteristics Gate Threshold Voltage VTH VDS=VGS IDS=250uA 2 3 4 V Static Drain-Source On-Resistance RDS(on) VGS=10V IDS=10A - 7.5 8.8 mΩ Dynamic Characteristics Input Capacitance Ciss VDS=30V VGS=0V Freq.=1MHz - 1690 2600 pF Output Capacitance Coss - 294 450 Reverse Transfer Capacitance Crss - 90 180 Switching Characteristics Turn-On Delay Time Td(on) VDD=30V VGS=10V RG = 6Ω IDS=1A - 16 30 ns Rise Time Tr - 12 24 Turn-Off Delay Time Td(off) - 32 55 Fall Time Tf - 23 40 Total Gate Charge Qg VDS=30V VGS=10V IDS=10A - 26.9 48 nC Gate to Source Charge Qgs - 10.7 20 Gate to Drain Charge Qgd - 6.55 13 Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V IS=1A - - 1 V Notes: 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=69A., Starting TJ=25°C 3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air. Aug.2018 DAM14N60S |
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