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WS7931DB Datasheet(PDF) 5 Page - Will Semiconductor Ltd.

Part # WS7931DB
Description  CMOS Medium Band LTE LNA
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Manufacturer  WILLSEMI [Will Semiconductor Ltd.]
Direct Link  http://www.willsemi.com/index.php?siteid=2
Logo WILLSEMI - Will Semiconductor Ltd.

WS7931DB Datasheet(HTML) 5 Page - Will Semiconductor Ltd.

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WS7931DB
Will Semiconductor Ltd.
5
Aug, 2018 _ Rev. 1.5
1805
MHz ≤ f ≤ 2200 MHz; VCC = 2.8 V; VEN = 0 V; Temp = 25
C; input matched to 50 Ω with a 5.6 nH
inductor; The condition is applied unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICC
Supply current
6
9
12
μA
Gp
Power gain
f = 1843 MHz
-3.2
-4.0
dB
f = 1960 MHz
-3.0
-4.0
dB
f = 2140 MHz
-3.2
-4.0
dB
RLin
Input return loss
f = 1843 MHz
15.0
dB
f = 1960 MHz
14.5
dB
f = 2140 MHz
10.0
dB
RLout
Output return loss
f = 1843 MHz
14.0
dB
f = 1960 MHz
25.0
dB
f = 2140 MHz
15.0
dB
IP1dB
Input power at 1 dB
gain compression
f = 1850 MHz
+4.5
dBm
f = 2150 MHz
+4.5
dBm
IIP3
Input third-order
intercept point
f = 1850 MHz[1]
+27.0
dBm
f = 2150 MHz[2]
+27.0
dBm
[1] f1 = 1840 MHz, f2 = 1850 MHz, Pin = -10 dBm
[2] f1 = 2140 MHz, f2 = 2150 MHz, Pin = -10 dBm


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