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BUK7610-55AL Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUK7610-55AL Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 14 page 9397 750 14362 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 31 March 2005 3 of 14 Philips Semiconductors BUK75/7610-55AL N-channel TrenchMOS™ standard level FET VGS ≥ 5V (1) Capped at 75 A due to package. Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. Tmb =25 °C; IDM is single pulse. (1) Capped at 75 A due to package. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03aa16 0 40 80 120 0 50 100 150 200 Tmb ( °C) Pder (%) 003aaa726 0 50 100 150 0 50 100 150 200 Tmb ( °C) ID (A) (1) P der P tot P tot 25 C ° () ----------------------- 100 % × = 003aaa737 1 10 10 2 10 3 1 10 10 2 VDS (V) ID (A) DC 100 ms 10 ms Limit RDSon = VDS / ID 1 ms tp = 10 µ s 100 µs (1) |
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