Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

BUK7620-55A Datasheet(PDF) 5 Page - NXP Semiconductors

Part # BUK7620-55A
Description  N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance.
Download  15 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK7620-55A Datasheet(HTML) 5 Page - NXP Semiconductors

  BUK7620-55A Datasheet HTML 1Page - NXP Semiconductors BUK7620-55A Datasheet HTML 2Page - NXP Semiconductors BUK7620-55A Datasheet HTML 3Page - NXP Semiconductors BUK7620-55A Datasheet HTML 4Page - NXP Semiconductors BUK7620-55A Datasheet HTML 5Page - NXP Semiconductors BUK7620-55A Datasheet HTML 6Page - NXP Semiconductors BUK7620-55A Datasheet HTML 7Page - NXP Semiconductors BUK7620-55A Datasheet HTML 8Page - NXP Semiconductors BUK7620-55A Datasheet HTML 9Page - NXP Semiconductors Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 15 page
background image
Philips Semiconductors
BUK7520-55A; BUK7620-55A
TrenchMOS™ standard level FET
Product specification
Rev. 01 — 18 January 2001
5 of 15
9397 750 07751
© Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C55
−−
V
Tj = −55 °C50
−−
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Figure 9
Tj =25 °C2
3
4
V
Tj = 175 °C1
−−
V
Tj = −55 °C
−−
4.4
V
IDSS
drain-source leakage current
VDS = 55 V; VGS =0V
Tj =25 °C
0.05
10
µA
Tj = 175 °C
−−
500
µA
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =25A;
Figure 7 and 8
Tj =25 °C
17
20
m
Tj = 175 °C
−−
40
m
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
1200
1592
pF
Coss
output capacitance
290
356
pF
Crss
reverse transfer capacitance
179
240
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 Ω;
VGS =10V; RG =10 Ω;
15
ns
tr
rise time
74
ns
td(off)
turn-off delay time
70
ns
tf
fall time
40
ns
Ld
internal drain inductance
from drain lead 6mm from
package to centre of die
4.5
nH
from contact screw on
mounting base to centre of
die SOT78
3.5
nH
from upper edge of drain
mounting base to centre of
die SOT404
2.5
nH
Ls
internal source inductance
from source lead to source
bond pad
7.5
nH


Similar Part No. - BUK7620-55A

ManufacturerPart #DatasheetDescription
logo
Inchange Semiconductor ...
BUK7620-55A ISC-BUK7620-55A Datasheet
305Kb / 2P
   isc N-Channel MOSFET Transistor
logo
Nexperia B.V. All right...
BUK7620-55A NEXPERIA-BUK7620-55A Datasheet
934Kb / 13P
   N-channel TrenchMOS standard level FET
Rev. 02 - 16 June 2010
More results

Similar Description - BUK7620-55A

ManufacturerPart #DatasheetDescription
logo
ZP Semiconductor
PMV30UN ZPSEMI-PMV30UN Datasheet
200Kb / 3P
   N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS??technology.
logo
NXP Semiconductors
2N7002F215 NXP-2N7002F215 Datasheet
100Kb / 12P
   N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
Rev. 03-28 April 2006
PHB191NQ06LT PHILIPS-PHB191NQ06LT Datasheet
91Kb / 13P
   Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology
Rev. 01-05 May 2004
PH1955L PHILIPS-PH1955L Datasheet
77Kb / 12P
   Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
Rev. 01-15 August 2005
PSMN005-75P PHILIPS-PSMN005-75P Datasheet
271Kb / 13P
   N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology.
Rev. 01-26 April 2002
logo
SHIKUES Electronics
SKCS120N03ZB SKTECHNOLGY-SKCS120N03ZB Datasheet
1Mb / 6P
   N-Channel Enhancement Mode Field Effect Transistor in a DFN 3*3A-8L Plastic Package.
SDW3045 SKTECHNOLGY-SDW3045 Datasheet
1,003Kb / 5P
   N-Channel enhancement mode power field effect transistors are using trench DMOS technology
logo
NXP Semiconductors
BUK9006-55A PHILIPS-BUK9006-55A Datasheet
226Kb / 10P
   N-channel Enhancement mode field-effect power Transistor
Rev. 01-1 August 2003
logo
New Jersey Semi-Conduct...
NDP606A NJSEMI-NDP606A Datasheet
121Kb / 3P
   N-Channel Enhancement Mode Power Field Effect Transistor
logo
NXP Semiconductors
PSMN006-20K518 NXP-PSMN006-20K518 Datasheet
261Kb / 12P
   Very low on-state resistance
Rev. 01-30 May 2002
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com