Philips Semiconductors

BUK7775-55A

N-channel TrenchMOS™ standard level FET

Product data

Rev. 02 — 7 June 2004

8 of 12

9397 750 13325

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Fig 13. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 14. Gate-source voltage as a function of gate

charge; typical values.

Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.

03ne10

0

5

10

15

20

25

024

68

10

VGS (V)

ID

(A)

Tj = 150

Tj = 25

03nc05

0

1

2

3

4

5

6

7

8

9

10

0

5

10

15

QG (nC)

VGS

(V)

VDD= 44 V

VDD= 14 V

03ne11

0

20

40

60

80

100

120

0.0

0.5

1.0

1.5

2.0

VSD (V)

IS

(A)

Tj = 150

Tj = 25